All MOSFET. DHS065N10 Datasheet

 

DHS065N10 Datasheet and Replacement


   Type Designator: DHS065N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 172 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 95 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 60.5 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO220C
 

 DHS065N10 substitution

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DHS065N10 Datasheet (PDF)

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DHS065N10

DHS065N1095A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 7.4mDS(on) (TYP)the RoHS standard.13 SI = 95AD2 Features Fast switching Low on resistance Low ga

 0.1. Size:672K  cn wxdh
 dhs065n10p.pdf pdf_icon

DHS065N10

DHS065N10P80A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 6.5mDS(on) (TYP)the RoHS standard.13 SI = 80AD2 Features Fast switching Low on resistance Low g

 7.1. Size:904K  cn wxdh
 dhs065n85p.pdf pdf_icon

DHS065N10

DHS065N85P80A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 5.8mDS(on) (TYP)the RoHS standard.13 SI = 80AD2 Features Fast switching Low on resistance Low gate

 7.2. Size:1177K  cn wxdh
 dhs065n85 dhs065n85f dhs065n85i dhs065n85e dhs065n85b dhs065n85d.pdf pdf_icon

DHS065N10

DHS065N85/DHS065N85F/DHS065N85IDHS065N85E/DHS065N85B/DHS065N85D100A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 6.5mDS(on) (TYP)the RoHS standard.13 SI = 100AD2 Features

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Datasheet: DHS055N07 , DHS055N07B , DHS055N07D , DHS055N07E , DHS055N85 , DHS055N85B , DHS055N85D , DHS055N85E , IRFZ44N , DHS065N10P , DHS065N85 , DHS065N85B , DHS065N85D , DHS065N85E , DHS065N85F , DHS065N85I , DHS065N85P .

History: DHS055N07E | DTE043N04NA | 2N6915

Keywords - DHS065N10 MOSFET datasheet

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