DHS065N10 Datasheet. Specs and Replacement
Type Designator: DHS065N10 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 172 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 95 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60.5 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220C
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DHS065N10 substitution
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DHS065N10 datasheet
dhs065n10.pdf
DHS065N10 95A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 7.4m DS(on) (TYP) the RoHS standard. 1 3 S I = 95A D 2 Features Fast switching Low on resistance Low ga... See More ⇒
dhs065n10p.pdf
DHS065N10P 80A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 6.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 80A D 2 Features Fast switching Low on resistance Low g... See More ⇒
dhs065n85p.pdf
DHS065N85P 80A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.8m DS(on) (TYP) the RoHS standard. 1 3 S I = 80A D 2 Features Fast switching Low on resistance Low gate... See More ⇒
dhs065n85 dhs065n85f dhs065n85i dhs065n85e dhs065n85b dhs065n85d.pdf
DHS065N85/DHS065N85F/DHS065N85I DHS065N85E/DHS065N85B/DHS065N85D 100A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 6.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 100A D 2 Features... See More ⇒
Detailed specifications: DHS055N07, DHS055N07B, DHS055N07D, DHS055N07E, DHS055N85, DHS055N85B, DHS055N85D, DHS055N85E, IRFZ44N, DHS065N10P, DHS065N85, DHS065N85B, DHS065N85D, DHS065N85E, DHS065N85F, DHS065N85I, DHS065N85P
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