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DHS065N10 Spec and Replacement


   Type Designator: DHS065N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 172 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 95 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 60.5 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO220C

 DHS065N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHS065N10 Specs

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DHS065N10

DHS065N10 95A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 7.4m DS(on) (TYP) the RoHS standard. 1 3 S I = 95A D 2 Features Fast switching Low on resistance Low ga... See More ⇒

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DHS065N10

DHS065N10P 80A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 6.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 80A D 2 Features Fast switching Low on resistance Low g... See More ⇒

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DHS065N10

DHS065N85P 80A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.8m DS(on) (TYP) the RoHS standard. 1 3 S I = 80A D 2 Features Fast switching Low on resistance Low gate... See More ⇒

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DHS065N10

DHS065N85/DHS065N85F/DHS065N85I DHS065N85E/DHS065N85B/DHS065N85D 100A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 6.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 100A D 2 Features... See More ⇒

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Detailed specifications: DHS055N07 , DHS055N07B , DHS055N07D , DHS055N07E , DHS055N85 , DHS055N85B , DHS055N85D , DHS055N85E , IRFZ44N , DHS065N10P , DHS065N85 , DHS065N85B , DHS065N85D , DHS065N85E , DHS065N85F , DHS065N85I , DHS065N85P .

History: DHS180N10L | DHS180N10LI

Keywords - DHS065N10 MOSFET specs

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