Справочник MOSFET. DHS065N10

 

DHS065N10 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DHS065N10
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 172 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 95 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 60.5 ns
   Cossⓘ - Выходная емкость: 400 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: TO220C
 

 Аналог (замена) для DHS065N10

   - подбор ⓘ MOSFET транзистора по параметрам

 

DHS065N10 Datasheet (PDF)

 ..1. Size:784K  cn wxdh
 dhs065n10.pdf pdf_icon

DHS065N10

DHS065N1095A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 7.4mDS(on) (TYP)the RoHS standard.13 SI = 95AD2 Features Fast switching Low on resistance Low ga

 0.1. Size:672K  cn wxdh
 dhs065n10p.pdf pdf_icon

DHS065N10

DHS065N10P80A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 6.5mDS(on) (TYP)the RoHS standard.13 SI = 80AD2 Features Fast switching Low on resistance Low g

 7.1. Size:904K  cn wxdh
 dhs065n85p.pdf pdf_icon

DHS065N10

DHS065N85P80A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 5.8mDS(on) (TYP)the RoHS standard.13 SI = 80AD2 Features Fast switching Low on resistance Low gate

 7.2. Size:1177K  cn wxdh
 dhs065n85 dhs065n85f dhs065n85i dhs065n85e dhs065n85b dhs065n85d.pdf pdf_icon

DHS065N10

DHS065N85/DHS065N85F/DHS065N85IDHS065N85E/DHS065N85B/DHS065N85D100A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 6.5mDS(on) (TYP)the RoHS standard.13 SI = 100AD2 Features

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... DHS055N07 , DHS055N07B , DHS055N07D , DHS055N07E , DHS055N85 , DHS055N85B , DHS055N85D , DHS055N85E , IRFZ44N , DHS065N10P , DHS065N85 , DHS065N85B , DHS065N85D , DHS065N85E , DHS065N85F , DHS065N85I , DHS065N85P .

 

 
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