DHS065N10 datasheet, аналоги, основные параметры

Наименование производителя: DHS065N10  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 172 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 95 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 60.5 ns

Cossⓘ - Выходная емкость: 400 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm

Тип корпуса: TO220C

  📄📄 Копировать 

Аналог (замена) для DHS065N10

- подборⓘ MOSFET транзистора по параметрам

 

DHS065N10 даташит

 ..1. Size:784K  cn wxdh
 dhs065n10.pdf pdf_icon

DHS065N10

DHS065N10 95A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 7.4m DS(on) (TYP) the RoHS standard. 1 3 S I = 95A D 2 Features Fast switching Low on resistance Low ga

 0.1. Size:672K  cn wxdh
 dhs065n10p.pdf pdf_icon

DHS065N10

DHS065N10P 80A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 6.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 80A D 2 Features Fast switching Low on resistance Low g

 7.1. Size:904K  cn wxdh
 dhs065n85p.pdf pdf_icon

DHS065N10

DHS065N85P 80A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.8m DS(on) (TYP) the RoHS standard. 1 3 S I = 80A D 2 Features Fast switching Low on resistance Low gate

 7.2. Size:1177K  cn wxdh
 dhs065n85 dhs065n85f dhs065n85i dhs065n85e dhs065n85b dhs065n85d.pdf pdf_icon

DHS065N10

DHS065N85/DHS065N85F/DHS065N85I DHS065N85E/DHS065N85B/DHS065N85D 100A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 6.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 100A D 2 Features

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... DHS055N07, DHS055N07B, DHS055N07D, DHS055N07E, DHS055N85, DHS055N85B, DHS055N85D, DHS055N85E, IRFZ44N, DHS065N10P, DHS065N85, DHS065N85B, DHS065N85D, DHS065N85E, DHS065N85F, DHS065N85I, DHS065N85P