All MOSFET. DSE012N04NA Datasheet

 

DSE012N04NA Datasheet and Replacement


   Type Designator: DSE012N04NA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 5403 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00115 Ohm
   Package: TO263
 

 DSE012N04NA substitution

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DSE012N04NA Datasheet (PDF)

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DSE012N04NA

DSE012N04NA 40V/0.85m/200A N-MOSFET Features Key ParametersVDS AEC-Q101 qualified 40VRDS(on)typ. Low on resistance 0.85mID (Silicon limit) Low reverse transfer capacitances 400AID (Package limit) 100% single pulse avalanche energy test 200A 100% VDS test Vth 2.9VCiss@10V Pb-Free plating / Halogen-Free / RoHS compliant 9669pFQgd 11.5nCApplica

Datasheet: DHS065N85I , DHS065N85P , DHSJ11N65 , DHSJ13N65 , DHSJ17N65 , DHSJ21N65W , DHSJ21N65Z , DHSJ25N65F , 10N60 , DSE022N10N3 , F4N60 , F4N65 , F4N70 , F50N06 , F50N20 , F5N65C , F5N80 .

Keywords - DSE012N04NA MOSFET datasheet

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