DSE012N04NA Datasheet. Specs and Replacement
Type Designator: DSE012N04NA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 5403 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00115 Ohm
Package: TO263
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DSE012N04NA substitution
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DSE012N04NA datasheet
dse012n04na.pdf
DSE012N04NA 40V/0.85m /200A N-MOSFET Features Key Parameters VDS AEC-Q101 qualified 40V RDS(on)typ. Low on resistance 0.85m ID (Silicon limit) Low reverse transfer capacitances 400A ID (Package limit) 100% single pulse avalanche energy test 200A 100% VDS test Vth 2.9V Ciss@10V Pb-Free plating / Halogen-Free / RoHS compliant 9669pF Qgd 11.5nC Applica... See More ⇒
Detailed specifications: DHS065N85I, DHS065N85P, DHSJ11N65, DHSJ13N65, DHSJ17N65, DHSJ21N65W, DHSJ21N65Z, DHSJ25N65F, IRFP260N, DSE022N10N3, F4N60, F4N65, F4N70, F50N06, F50N20, F5N65C, F5N80
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
