All MOSFET. DSE022N10N3 Datasheet

 

DSE022N10N3 Datasheet and Replacement


   Type Designator: DSE022N10N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 240 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 177 nC
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 3463 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TO263
 

 DSE022N10N3 substitution

   - MOSFET ⓘ Cross-Reference Search

 

DSE022N10N3 Datasheet (PDF)

 ..1. Size:1551K  cn wxdh
 dse022n10n3 dsg024n10n3.pdf pdf_icon

DSE022N10N3

DSE022N10N3&DSG024N10N3 100V/1.7m/240A N-MOSFET Features Key ParametersVDS Low on resistance 100VRDS(on)typ.TO-263 Low reverse transfer capacitances 1.7mRDS(on)typ.TO-220 100% single pulse avalanche energy test 1.9m 100% VDS test VTH 3VIDSilicon limit Pb-Free plating / Halogen-Free / RoHS compliant 364AIDPackage limit240A

 9.1. Size:1192K  cn wxdh
 dsg030n10n3 dse028n10n3.pdf pdf_icon

DSE022N10N3

DSG030N10N3/DSE028N10N3170A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 100VDSSadvanced splite gate trench technology design, provided2 Dexcellent Rdson and low gate charge. Which accords withR = 2.6mTO-220DS(on) (TYP)the RoHS standard.GR = 2.4mTO-263DS(on) (TYP)12 Features 3

 9.2. Size:1479K  cn wxdh
 dse026n10n3a.pdf pdf_icon

DSE022N10N3

DSE026N10N3A 100V/2.2m/180A N-MOSFET Features Key ParametersVDS AEC-Q101 qualified 100VRDS(on)typ. Low on resistance 2.2m Low reverse transfer capacitances VTH 3VID(Silicon limit) 100% single pulse avalanche energy test 240AID (Package limit) 100% VDS test 180ACiss@10V Pb-Free plating / Halogen-Free / RoHS compliant 7035pFQgd 27nCApplication

 9.3. Size:947K  cn wxdh
 dse026n10na dsg028n10na.pdf pdf_icon

DSE022N10N3

DSE026N10NA&DSG028N10NA180A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedR = 2.4mT0-220DS(on) (TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard. R = 2.2mT0-263DS(on) (TYP)13 SI = 180AD2

SHOW MORE

Datasheet: DHS065N85P , DHSJ11N65 , DHSJ13N65 , DHSJ17N65 , DHSJ21N65W , DHSJ21N65Z , DHSJ25N65F , DSE012N04NA , AON6414A , , , , , , , , .

Keywords - DSE022N10N3 MOSFET datasheet

 DSE022N10N3 cross reference
 DSE022N10N3 equivalent finder
 DSE022N10N3 lookup
 DSE022N10N3 substitution
 DSE022N10N3 replacement

 

 
Back to Top

 


 
.