All MOSFET. F6N90 Datasheet

 

F6N90 Datasheet and Replacement


   Type Designator: F6N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17.2 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO220F
 

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F6N90 Datasheet (PDF)

 ..1. Size:1389K  cn wxdh
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F6N90

F6N906A 900V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 900Vplanar technology which reduce the conduction loss, improve switchingI = 6.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard. TO-220F provides insulation voltage rated at 2000VRDS(on)TYP)= 1

 0.1. Size:206K  1
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F6N90

 0.2. Size:710K  1
stf6n90k5.pdf pdf_icon

F6N90

STF6N90K5 N-channel 900 V, 0.91 typ., 6 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) DSTF6N90K5 900 V 1.10 6 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected TO-220FPApplications

 0.3. Size:858K  fairchild semi
fqpf6n90ct.pdf pdf_icon

F6N90

TMQFETFQP6N90C/FQPF6N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

Datasheet: F4N65 , F4N70 , F50N06 , F50N20 , F5N65C , F5N80 , F630 , F640 , AON7408 , F740 , F7N60 , F7N70 , F7N80 , F80N06 , F8N50 , F8N60 , F8N65 .

History: 2SK993

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