I25N10 Datasheet. Specs and Replacement

Type Designator: I25N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 107 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO262

  📄📄 Copy 

I25N10 substitution

- MOSFET ⓘ Cross-Reference Search

 

I25N10 datasheet

 ..1. Size:1238K  cn wxdh
 25n10 f25n10 i25n10 e25n10 b25n10 d25n10.pdf pdf_icon

I25N10

25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used V = 100V DSS advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the R = 30m DS(on) TYP) RoHS standard. I = 25A D 2 Features Fast Switching Low ON Resistance(Rdson 36m ) ... See More ⇒

 0.1. Size:4265K  cn szxunrui
 si25n10.pdf pdf_icon

I25N10

N -CHANNEL ENHANCEMENT MODE POWER MOSFET SI25N10 N-Channel Enhancement Mode Power MOSFET Description TO-252 The SI25N10 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a S Battery protection or in other switching application. G Equivalent Circuit General Fea... See More ⇒

Detailed specifications: F80N06, F8N50, F8N60, F8N65, FD120N10ZR, FN6005, I110N04, I20N50, 4435, I50N06, I630, I640, I740, I80N06, ID120N10ZR, IN6005, N6005

Keywords - I25N10 MOSFET specs

 I25N10 cross reference

 I25N10 equivalent finder

 I25N10 pdf lookup

 I25N10 substitution

 I25N10 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.