All MOSFET. I25N10 Equivalents Search

 

I25N10 Spec and Replacement


   Type Designator: I25N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO262

 I25N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

I25N10 Specs

 ..1. Size:1238K  cn wxdh
 25n10 f25n10 i25n10 e25n10 b25n10 d25n10.pdf pdf_icon

I25N10

25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used V = 100V DSS advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the R = 30m DS(on) TYP) RoHS standard. I = 25A D 2 Features Fast Switching Low ON Resistance(Rdson 36m ) ... See More ⇒

 0.1. Size:4265K  cn szxunrui
 si25n10.pdf pdf_icon

I25N10

N -CHANNEL ENHANCEMENT MODE POWER MOSFET SI25N10 N-Channel Enhancement Mode Power MOSFET Description TO-252 The SI25N10 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a S Battery protection or in other switching application. G Equivalent Circuit General Fea... See More ⇒

Detailed specifications: F80N06 , F8N50 , F8N60 , F8N65 , FD120N10ZR , FN6005 , I110N04 , I20N50 , 4435 , I50N06 , I630 , I640 , I740 , I80N06 , ID120N10ZR , IN6005 , N6005 .

History: PSMN1R5-25MLH | ATM7N65ATE

Keywords - I25N10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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