All MOSFET. HUF75842P3 Datasheet

 

HUF75842P3 MOSFET. Datasheet pdf. Equivalent

Type Designator: HUF75842P3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 230 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 43 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 144 nC

Maximum Drain-Source On-State Resistance (Rds): 0.042 Ohm

Package: TO220

HUF75842P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HUF75842P3 Datasheet (PDF)

1.1. huf75842p3.pdf Size:197K _fairchild_semi

HUF75842P3
HUF75842P3

HUF75842P3, HUF75842S3S Data Sheet December 2001 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN Ultra Low On-Resistance DRAIN (FLANGE) GATE - rDS(ON) = 0.042?, VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN - Spice and SABER Thermal Impedance

2.1. huf75842s3s huf75842s3st.pdf Size:196K _update_mosfet

HUF75842P3
HUF75842P3

HUF75842P3, HUF75842S3S Data Sheet December 2001 43A, 150V, 0.042 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN • Ultra Low On-Resistance DRAIN (FLANGE) GATE - rDS(ON) = 0.042Ω, VGS = 10V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ Electrical Models DRAIN - Spice and SABER Therm

 4.1. huf75831sk8t.pdf Size:247K _update_mosfet

HUF75842P3
HUF75842P3

 HUF75831SK8 Data Sheet December 2001 3A, 150V, 0.095 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS(ON) = 0.095Ω, VGS = 10V • Simulation Models 5 - Temperature Compensated PSPICE® and SABER™ 1 Electrical Models 2 - Spice and SABER Thermal Impedance Models 3 4 - www.fairchildsemi.com • Peak

4.2. huf75829d3st huf75829d3 huf75829d3s.pdf Size:191K _update_mosfet

HUF75842P3
HUF75842P3

 HUFA75829D3, HUFA75829D3S Data Sheet December 2001 18A, 150V, 0.110 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN • Ultra Low On-Resistance SOURCE (FLANGE) DRAIN - rDS(ON) = 0.110Ω, VGS = 10V GATE GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ Electrical Models DRAIN (FLANGE) - Spice

 4.3. huf75852g3 f085.pdf Size:259K _fairchild_semi

HUF75842P3
HUF75842P3

HUFA75852G3_F085 Data Sheet December 2011 75A, 150V, 0.016 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-247 Features SOURCE • Ultra Low On-Resistance DRAIN GATE - rDS(ON) = 0.016Ω, VGS = 10V • Peak Current vs Pulse Width Curve • UIS Rating Curve • Qualified to AEC Q101 • RoHS Compliant DRAIN (TAB) Ordering Information Symbol PART NUMBER PACKAGE BRA

4.4. huf75852g3.pdf Size:193K _fairchild_semi

HUF75842P3
HUF75842P3

HUF75852G3 Data Sheet December 2001 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE Ultra Low On-Resistance DRAIN GATE - rDS(ON) = 0.016?, VGS = 10V Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com DRAIN (TAB) Peak Current vs P

Datasheet: FQU5P20 , FQU8P10 , FQU9N25 , HUF75542P3 , HUF75631S3S , FDB86135 , HUF75639S3 , FDD86252 , 2SK3569 , HUF75852G3 , HUFA75307T3ST , HUFA75321D3S , HUFA75344S3 , HUFA75639S3S , FDD86110 , HUFA76407DK8T_F085 , HUFA76409D3ST .

 
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