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FBM80N70P Spec and Replacement


   Type Designator: FBM80N70P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO220

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FBM80N70P Specs

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FBM80N70P

FBM@ FBM80N70P/B N-Channel Enhancement Mode MOSFET Features Pin Description 70V/80A RDS(ON)= 6.0 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S D G Lead Free and Green Devices Available (RoHS Compliant) S D G TO-263-2L TO-263-2L TO-220FB-3L TO-220FB-3L Applications D Switching application Power Management for Inverter Systems. G N-Channel M... See More ⇒

Detailed specifications: I640 , I740 , I80N06 , ID120N10ZR , IN6005 , N6005 , N6005B , N6005D , IRF530 , FBM80N70B , FBM85N80P , FBM85N80B , JMSL0315AP , JMSL0315APD , JMSL0315ARD , JMSL0315AU , JMSL0315AUD .

History: AP4406A | RJK0390DPA | JCS8N60C | UPA1981 | F4N60

Keywords - FBM80N70P MOSFET specs

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