FBM80N70P Datasheet. Specs and Replacement
Type Designator: FBM80N70P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 900 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO220
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FBM80N70P substitution
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FBM80N70P datasheet
fbm80n70.pdf
FBM@ FBM80N70P/B N-Channel Enhancement Mode MOSFET Features Pin Description 70V/80A RDS(ON)= 6.0 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S D G Lead Free and Green Devices Available (RoHS Compliant) S D G TO-263-2L TO-263-2L TO-220FB-3L TO-220FB-3L Applications D Switching application Power Management for Inverter Systems. G N-Channel M... See More ⇒
Detailed specifications: I640, I740, I80N06, ID120N10ZR, IN6005, N6005, N6005B, N6005D, IRF530, FBM80N70B, FBM85N80P, FBM85N80B, JMSL0315AP, JMSL0315APD, JMSL0315ARD, JMSL0315AU, JMSL0315AUD
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