FBM85N80P Datasheet and Replacement
Type Designator: FBM85N80P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 389 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
FBM85N80P substitution
FBM85N80P Datasheet (PDF)
fbm85n80.pdf

FBM@FBM85N80P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/90ARDS(ON)= 7.0 m (typ.) @ VGS=10V100% avalanche tested Reliable and RuggedSDG Lead Free and Green Devices Available(RoHS Compliant)SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD Switching application Power Management for Inverter Systems.GN-Channel M
Datasheet: I80N06 , ID120N10ZR , IN6005 , N6005 , N6005B , N6005D , FBM80N70P , FBM80N70B , IRFP450 , FBM85N80B , JMSL0315AP , JMSL0315APD , JMSL0315ARD , JMSL0315AU , JMSL0315AUD , JMSL0315AV , JMSL0401AG .
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