JMSL0401AGQ PDF and Equivalents Search

 

JMSL0401AGQ Specs and Replacement

Type Designator: JMSL0401AGQ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 198 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 1607 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm

Package: PDFN5X6-8L

JMSL0401AGQ substitution

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JMSL0401AGQ datasheet

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JMSL0401AGQ

JMSL0401AGQ 40V 1.3mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 198 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 mW RDS(ON)_Typ (@ VGS = 4.5V) 1.7 mW Halogen-free and RoHS-compliant AEC-Q101 Qualifi... See More ⇒

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JMSL0401AGQ

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Detailed specifications: FBM85N80B, JMSL0315AP, JMSL0315APD, JMSL0315ARD, JMSL0315AU, JMSL0315AUD, JMSL0315AV, JMSL0401AG, IRF1407, JMSL0401BG, JMSL0401BGQ, JMSH0602AC, JMSH0602AE, JMSH0602AEQ, JMSH0602AG, JMSH0602AGQ, JMSH0602AK

Keywords - JMSL0401AGQ MOSFET specs

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