All MOSFET. JMSH0602AGQ Datasheet

 

JMSH0602AGQ Datasheet and Replacement


   Type Designator: JMSH0602AGQ
   Marking Code: SH0602AQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
   |Id| ⓘ - Maximum Drain Current: 168 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 50 nC
   tr ⓘ - Rise Time: 9.2 nS
   Cossⓘ - Output Capacitance: 896 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: PDFN5X6-8L
 

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JMSH0602AGQ Datasheet (PDF)

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 jmsh0602agq.pdf pdf_icon

JMSH0602AGQ

JMSH0602AGQ60V 1.9m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 168 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 4.1. Size:345K  jiejie micro
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JMSH0602AGQ

JMSH0602AG60V 1.9m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 175 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.9 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indus

 5.1. Size:320K  jiejie micro
 jmsh0602aeq.pdf pdf_icon

JMSH0602AGQ

JMSH0602AEQ60V 2.0m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 224 A RDS(ON)_Typ (@ VGS = 10V)2.0 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive ApplicationsTO-263-3L

 5.2. Size:407K  jiejie micro
 jmsh0602akq.pdf pdf_icon

JMSH0602AGQ

JMSH0602AKQ60V 2.2m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 206 A RDS(ON) (@ VGS = 10V)2.2 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive ApplicationsTO-252-3L Top Vie

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - JMSH0602AGQ MOSFET datasheet

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