JBE102T PDF and Equivalents Search

 

JBE102T Specs and Replacement

Type Designator: JBE102T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 304 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 240 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 1501 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: TO263

JBE102T substitution

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JBE102T datasheet

 ..1. Size:517K  jiejie micro
jbe102t.pdf pdf_icon

JBE102T

JBE102T 100V 2.2mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% Rg Tested 100% UIS Tested, 100% RgTested ID (@ VGS = 10V) (1) 240 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 2.2 mW... See More ⇒

 8.1. Size:1023K  jiejie micro
jbe102y.pdf pdf_icon

JBE102T

JBE102Y 100V 3.1mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% Rgg Tested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 183 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.1 mW Pb-free Lead Plating... See More ⇒

 8.2. Size:1021K  jiejie micro
jbe102g.pdf pdf_icon

JBE102T

JBE102G 100V 2.3mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 206 A RDS(ON) (@ VGS = 10V) 2.3 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robotics Curr... See More ⇒

 9.1. Size:614K  jiejie micro
jbe103t.pdf pdf_icon

JBE102T

JBE103T 100V 3.0mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.1 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 184 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3 Pb-free Lead Plating mW ... See More ⇒

Detailed specifications: JMSH0602AK, JMSH0602AKQ, JMSH0602PC, JMSH0602PE, JMSH0602PG, JMSH0602PGQ, JMSH0602PK, JBE102G, 75N75, JBE102Y, JBE103T, JBE111P, JBE112Q, JBE112T, JBE113P, JBL083M, JBL101N

Keywords - JBE102T MOSFET specs

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