All MOSFET. HUFA75344S3 Datasheet

 

HUFA75344S3 Datasheet and Replacement


   Type Designator: HUFA75344S3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 285 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 90 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO262 I2PAK
 

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HUFA75344S3 Datasheet (PDF)

 0.1. Size:329K  fairchild semi
 hufa75344g3 hufa75344p3 hufa75344s3s.pdf pdf_icon

HUFA75344S3

HUFA75344G3, HUFA75344P3, HUFA75344S3S,HUFA75344S3Data Sheet December 200475A, 55V, 0.008 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance PSPICE a

 6.1. Size:207K  fairchild semi
 hufa75343g3 hufa75343p3 hufa75343s3s hufa75343s3st.pdf pdf_icon

HUFA75344S3

HUFA75343G3, HUFA75343P3, HUFA75343S3SData Sheet December 200175A, 55V, 0.009 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance PSPICE and SABER M

 6.2. Size:571K  fairchild semi
 hufa75345g3 hufa75345p3 hufa75345s3s hufa75345s3st.pdf pdf_icon

HUFA75344S3

HUFA75345G3, HUFA75345P3, HUFA75345S3SData Sheet June 200375A, 55V, 0.007 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models a

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Keywords - HUFA75344S3 MOSFET datasheet

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