JBE112T PDF and Equivalents Search

 

JBE112T Specs and Replacement

Type Designator: JBE112T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 199 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 1479 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: TO263

JBE112T substitution

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JBE112T datasheet

 ..1. Size:1231K  jiejie micro
jbe112t.pdf pdf_icon

JBE112T

110V, 199A, 2.3m N-channel Power SGT MOSFET JBE112T Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 110 V 100% Vds TESTED VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 199 A Pb-free plating RDS(ON)_Typ(@VGS=10V 2.3 mW Applications Load Switch PWM Application Power Manage... See More ⇒

 8.1. Size:1343K  jiejie micro
jbe112q.pdf pdf_icon

JBE112T

110V, 220A, 2.2m N-channel Power SGT MOSFET JBE112Q Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 110 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 220 A RDS(ON)_Typ(@VGS=10V 2.2 mW Applications Load Switch PWM Application Power Management D G S TO-26... See More ⇒

 9.1. Size:1340K  jiejie micro
jbe111p.pdf pdf_icon

JBE112T

110V, 294A, 2.0m N-channel Power SGT MOSFET JBE111P Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 110 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 294 A RDS(ON)_Typ(@VGS=10V 2.0 mW Applications Load Switch PWM Application Power Management D G S TO-26... See More ⇒

 9.2. Size:1242K  jiejie micro
jbe113p.pdf pdf_icon

JBE112T

100V, 175A, 3.2m N-channel Power SGT MOSFET JBE113P Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 175 A RDS(ON)_Typ(@VGS=10V 3.2 mW Applications Load Switch PWM Application Power Management D G S Schem... See More ⇒

Detailed specifications: JMSH0602PGQ, JMSH0602PK, JBE102G, JBE102T, JBE102Y, JBE103T, JBE111P, JBE112Q, 7N60, JBE113P, JBL083M, JBL101N, JMSH0605AGD, JMSH0605AGDQ, JMSH0606AG, JMSH0606AGQ, JMSH0606AK

Keywords - JBE112T MOSFET specs

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