JBE112T - параметры транзистора MOSFET, его аналоги, datasheet

JBE112T Datasheet (PDF)

..1. Size:1231K jiejie micro
jbe112t.pdf pdf_icon

110V, 199A, 2.3m N-channel Power SGT MOSFETJBE112TProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 110 V 100% Vds TESTEDVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 199 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.3 mWApplications Load Switch PWM Application Power Manage

8.1. Size:1343K jiejie micro
jbe112q.pdf pdf_icon

110V, 220A, 2.2m N-channel Power SGT MOSFETJBE112QProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 110 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 220 ARDS(ON)_Typ(@VGS=10V 2.2 mWApplications Load Switch PWM Application Power ManagementDG STO-26

9.1. Size:1340K jiejie micro
jbe111p.pdf pdf_icon

110V, 294A, 2.0m N-channel Power SGT MOSFETJBE111PProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 110 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 294 ARDS(ON)_Typ(@VGS=10V 2.0 mWApplications Load Switch PWM Application Power ManagementDG STO-26

9.2. Size:1242K jiejie micro
jbe113p.pdf pdf_icon

100V, 175A, 3.2m N-channel Power SGT MOSFETJBE113PProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 175 ARDS(ON)_Typ(@VGS=10V 3.2 mWApplications Load Switch PWM Application Power ManagementDG SSchem

Другие MOSFET... JMSH0602PGQ , JMSH0602PK , JBE102G , JBE102T , JBE102Y , JBE103T , JBE111P , JBE112Q , MMIS60R580P , JBE113P , JBL083M , JBL101N , JMSH0605AGD , JMSH0605AGDQ , JMSH0606AG , JMSH0606AGQ , JMSH0606AK .