JMSH1008AE PDF and Equivalents Search

 

JMSH1008AE Specs and Replacement

Type Designator: JMSH1008AE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 112 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.6 nS

Cossⓘ - Output Capacitance: 445 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO263

JMSH1008AE substitution

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JMSH1008AE datasheet

 ..1. Size:1068K  jiejie micro
jmsh1008ac jmsh1008ae.pdf pdf_icon

JMSH1008AE

JMSH1008AC JMSH1008AE 100V 6.8mW N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% R Tested g ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ (@ VGS = 10V) 6.8 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indu... See More ⇒

 5.1. Size:306K  jiejie micro
jmsh1008agq.pdf pdf_icon

JMSH1008AE

JMSH1008AGQ 100V 6.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 87 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 6.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications ... See More ⇒

 5.2. Size:350K  jiejie micro
jmsh1008akq.pdf pdf_icon

JMSH1008AE

JMSH1008AKQ 100V 6.9m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 92 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications... See More ⇒

 5.3. Size:290K  jiejie micro
jmsh1008ag.pdf pdf_icon

JMSH1008AE

JMSH1008AG 100V 6.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 92 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 6.2 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Automation... See More ⇒

Detailed specifications: JMSH0606PC, JMSH0606PG, JMSH0606PGD, JMSH0606PGDQ, JMSH0606PGQ, JMSH0606PK, JMSH0606PU, JMSH1008AC, IRF3205, JMSH1008AG, JMSH1008AGQ, JMSH1008AKQ, JMSH1008PC, JMSH1008PE, JMSH1008PG, JMSH1008PGQ, JMSH1008PK

Keywords - JMSH1008AE MOSFET specs

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