All MOSFET. JMSH1008AE Datasheet

 

JMSH1008AE Datasheet and Replacement


   Type Designator: JMSH1008AE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 112 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.6 nS
   Cossⓘ - Output Capacitance: 445 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263
 

 JMSH1008AE substitution

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JMSH1008AE Datasheet (PDF)

 ..1. Size:1068K  jiejie micro
jmsh1008ac jmsh1008ae.pdf pdf_icon

JMSH1008AE

JMSH1008ACJMSH1008AE100V 6.8mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% R Testedg ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ (@ VGS = 10V) 6.8 mW Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indu

 5.1. Size:306K  jiejie micro
jmsh1008agq.pdf pdf_icon

JMSH1008AE

JMSH1008AGQ100V 6.2m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 87 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 6.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 5.2. Size:350K  jiejie micro
jmsh1008akq.pdf pdf_icon

JMSH1008AE

JMSH1008AKQ100V 6.9m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 92 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)6.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 5.3. Size:290K  jiejie micro
jmsh1008ag.pdf pdf_icon

JMSH1008AE

JMSH1008AG100V 6.2m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 92 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 6.2 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Automation

Datasheet: JMSH0606PC , JMSH0606PG , JMSH0606PGD , JMSH0606PGDQ , JMSH0606PGQ , JMSH0606PK , JMSH0606PU , JMSH1008AC , IRF3205 , JMSH1008AG , JMSH1008AGQ , JMSH1008AKQ , JMSH1008PC , JMSH1008PE , JMSH1008PG , JMSH1008PGQ , JMSH1008PK .

History: FDA44N50 | RJK6022DJE

Keywords - JMSH1008AE MOSFET datasheet

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