JMPF630BJ Specs and Replacement
Type Designator: JMPF630BJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 54 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220F
JMPF630BJ substitution
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JMPF630BJ datasheet
jmpf630bj.pdf
200V, 8.3A, 280m N-channel Power Planar MOSFET JMPF630BJ Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 200 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 8.3 A RDS(ON)_Typ(@VGS=10V 280 mW Applications Load Switch PWM Application Power Management D G S ... See More ⇒
Detailed specifications: JMSL0303TG, JMSL0303TU, JMPF20N60BJ, JMPF20N65BJ, JMPF25N50BJ, JMPF4N60BJ, JMPF4N65BJ, JMPF5N50BJ, 2SK3878, JMPF7N65BJ, JMPF840BJ, JMPF8N60BJ, JMPL1050AE, JMPL1050AG, JMPL1050AGQ, JMPL1050AK, JMPL1050AKQ
Keywords - JMPF630BJ MOSFET specs
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