JMPF840BJ Datasheet and Replacement
Type Designator: JMPF840BJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 113 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.97 Ohm
Package: TO220F
JMPF840BJ substitution
JMPF840BJ Datasheet (PDF)
jmpf840bj.pdf
JMPF840BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 500V, 9A Load SwitchRDS(ON)
jmpf8n60bj.pdf
JMPF8N60BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 600V, 8A Load SwitchRDS(ON)
Datasheet: JMPF20N60BJ , JMPF20N65BJ , JMPF25N50BJ , JMPF4N60BJ , JMPF4N65BJ , JMPF5N50BJ , JMPF630BJ , JMPF7N65BJ , K4145 , JMPF8N60BJ , JMPL1050AE , JMPL1050AG , JMPL1050AGQ , JMPL1050AK , JMPL1050AKQ , JMPL1050AP , JMPL1050APD .
History: EMH2604 | APT802R4KN | STD17N06-1 | NTMFS6H818NLT1G | HUF75637P3 | IRLBA1304 | HUF75637S3S
Keywords - JMPF840BJ MOSFET datasheet
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History: EMH2604 | APT802R4KN | STD17N06-1 | NTMFS6H818NLT1G | HUF75637P3 | IRLBA1304 | HUF75637S3S
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