JMSH2010BE Datasheet and Replacement

JMSH2010BCJMSH2010BE200V 9.1mN-Ch Power MOSFETProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS200 V Low Gate Charge, Qg VGS(th)_Typ3.3 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 129 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)9.1 m Halogen-free and RoHS-compliantApplications Power Management

JMSH2010BS200V 8.8mW N-Ch Power MOSFETProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS200 V Low Gate Charge, Qg VGS(th)_Typ3.3 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 130 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)8.8 mW Halogen-free and RoHS-compliantApplications Power Management in Computing, CE,

JMSH2010BTL200V 8.0m TOLL N-Ch Power MOSFETProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS200 V Low Gate Charge, Qg VGS(th)_Typ3.3 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 118 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)8.0 m Halogen-free and RoHS-compliantApplications Power Management in Compu

200V, 109A, 9.1m N-channel Power SGT MOSFETJMSH2010PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 200 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 109 ARDS(ON)_Typ(@VGS=10V 9.1 mWApplications Load Switch PWM Application Power ManagementDG STO

200V, 100A, 8.6m N-channel Power Strong MOSFETJMSH2010PCQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 200 V High Current Carrying Capability VGS(th)_Typ 3.0 V Fully Characterized UIS and SOAID(@VGS=10V) 100 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 8.6 mW AEC-Q101 QualifiedApplication

JMSH2010PTL200V 7.2mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS200 V Low Gate Charge, Qg VGS(th)_Typ3.0 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 119 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.2 mW Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, I

200V, 96A, 9.3m N-channel Power SGT MOSFETJMSH2010PCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 200 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 96 ARDS(ON)_Typ(@VGS=10V 9.3 mWApplications Load Switch PWM Application Power ManagementDG STO-2

JMSH2010PS200V 8.0mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS200 V Low Gate Charge, Qg VGS(th)_Typ3.0 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 122 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)8.0 mW Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE