JMSH2010PS MOSFET Datasheet: N-Ch, 200V, 122A. Full specification with pinout and replacement list

JMSH2010PS Specs and Replacement

Type Designator: JMSH2010PS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 367 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 122 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 455 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm

Package: TO247

JMSH2010PS substitution

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JMSH2010PS datasheet

..1. Size:539K jiejie micro
jmsh2010ps.pdf pdf_icon

JMSH2010PS 200V 8.0mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 200 V Low Gate Charge, Qg VGS(th)_Typ 3.0 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 122 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 8.0 mW Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE... See More ⇒

5.1. Size:1343K jiejie micro
jmsh2010pe.pdf pdf_icon

200V, 109A, 9.1m N-channel Power SGT MOSFET JMSH2010PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 200 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 109 A RDS(ON)_Typ(@VGS=10V 9.1 mW Applications Load Switch PWM Application Power Management D G S TO... See More ⇒

5.2. Size:1291K jiejie micro
jmsh2010pcq.pdf pdf_icon

200V, 100A, 8.6m N-channel Power Strong MOSFET JMSH2010PCQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 200 V High Current Carrying Capability VGS(th)_Typ 3.0 V Fully Characterized UIS and SOA ID(@VGS=10V) 100 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 8.6 mW AEC-Q101 Qualified Application... See More ⇒

5.3. Size:555K jiejie micro
jmsh2010ptl.pdf pdf_icon

JMSH2010PTL 200V 7.2mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 200 V Low Gate Charge, Qg VGS(th)_Typ 3.0 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 119 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.2 mW Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, I... See More ⇒