JMH65R980APLN PDF and Equivalents Search

 

JMH65R980APLN Specs and Replacement

Type Designator: JMH65R980APLN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.6 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.98 Ohm

Package: DFN8080-4L

JMH65R980APLN substitution

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JMH65R980APLN datasheet

 ..1. Size:323K  jiejie micro
 jmh65r980apln.pdf pdf_icon

JMH65R980APLN

JMH65R980APLN 650V SuperJunction Power MOSFET Features Product Summary Parameter Extremely Low Gate Charge Value Unit VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 4.0 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 890 m Pb-free Lead Plating Eoss@400V 0.68 J ... See More ⇒

 4.1. Size:323K  jiejie micro
 jmh65r980af.pdf pdf_icon

JMH65R980APLN

JMH65R980AF 650V SuperJunction Power MOSFET Features Product Summary Parameter Extremely Low Gate Charge Value Unit VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 4.0 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 895 m Pb-free Lead Plating Eoss@400V 0.68 J H... See More ⇒

 4.2. Size:315K  jiejie micro
 jmh65r980acfp.pdf pdf_icon

JMH65R980APLN

JMH65R980ACFP 650V SuperJunction Power MOSFET Features Product Summary Parameter Extremely Low Gate Charge Value Unit VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 4.0 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 895 m Pb-free Lead Plating Eoss@400V 0.68 J ... See More ⇒

 4.3. Size:338K  jiejie micro
 jmh65r980akq.pdf pdf_icon

JMH65R980APLN

JMH65R980AKQ 650V SuperJunction Power MOSFET Features Product Summary Extremely Low Gate Charge Parameter Value Unit VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 4.0 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 820 m Pb-free Lead Plating Eoss@400V 0.68 J H... See More ⇒

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Detailed specifications: JMPL1025AK, JMH65R600MF, JMH65R600MK, JMH65R640AK, JMH65R980ACFP, JMH65R980AF, JMH65R980AK, JMH65R980AKQ, AO3400A, JMH70R430AF, JMH70R430AK, JBE083M, JBE083NS, JBE084M, JMSH0803AGS, JMSH0803MC, JMSH0803ME

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