All MOSFET. JMH70R430AK Datasheet

 

JMH70R430AK Datasheet and Replacement


   Type Designator: JMH70R430AK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 181 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.4 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.422 Ohm
   Package: TO252
 

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JMH70R430AK Datasheet (PDF)

 ..1. Size:368K  jiejie micro
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JMH70R430AK

JMH70R430AK700V 352m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Extremely Low Gate Charge VDS700 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 12 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)352 m Eoss@400V3.6 J Pb-free Lead Plating Hal

 4.1. Size:625K  jiejie micro
 jmh70r430af.pdf pdf_icon

JMH70R430AK

JMH70R430AF700V 350mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Extremely Low Gate Charge VDS700 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)350 mW Eoss@400V3.6 mJ Pb-free Lead Plating Halogen-f

Datasheet: JMH65R600MK , JMH65R640AK , JMH65R980ACFP , JMH65R980AF , JMH65R980AK , JMH65R980AKQ , JMH65R980APLN , JMH70R430AF , IRFZ48N , JBE083M , JBE083NS , JBE084M , , , , , .

History: HY1506I

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