JBE083M Datasheet and Replacement
Type Designator: JBE083M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 268 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 199 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 1224 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: TO263
JBE083M substitution
JBE083M Datasheet (PDF)
jbe083m.pdf

80V, 199A, 2.7m N-channel Power SGT MOSFETJBE083MProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 199 ARDS(ON)_Typ(@VGS=10V 2.7 mWApplications Load Switch PWM Application Power ManagementDG STO-263-
jbe083ns.pdf

80V, 133A, 5.8m N-channel Power SGT MOSFETJBE083NSProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 80 V 100% Vds TESTEDVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 133 A Pb-free platingRDS(ON)_Typ(@VGS=10V 5.8 mWApplications Load Switch PWM Application Power Managem
jbe084m.pdf

JBE084M80V 4.1mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS80 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 136 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 4.1 mW Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Communications
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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