JBE083M MOSFET Datasheet: N-Ch, 80V, 199A. Full specification with pinout and replacement list

JBE083M Specs and Replacement

Type Designator: JBE083M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 268 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 199 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 1224 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm

Package: TO263

JBE083M substitution

- MOSFET ⓘ Cross-Reference Search

JBE083M datasheet

..1. Size:1352K jiejie micro
jbe083m.pdf pdf_icon

80V, 199A, 2.7m N-channel Power SGT MOSFET JBE083M Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 199 A RDS(ON)_Typ(@VGS=10V 2.7 mW Applications Load Switch PWM Application Power Management D G S TO-263-... See More ⇒

8.1. Size:1298K jiejie micro
jbe083ns.pdf pdf_icon

80V, 133A, 5.8m N-channel Power SGT MOSFET JBE083NS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 80 V 100% Vds TESTED VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 133 A Pb-free plating RDS(ON)_Typ(@VGS=10V 5.8 mW Applications Load Switch PWM Application Power Managem... See More ⇒

9.1. Size:566K jiejie micro
jbe084m.pdf pdf_icon