2SK3210 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3210
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 30 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 180 nS
Drain-Source Capacitance (Cd): 820 pF
Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm
Package: LDPAK
2SK3210 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3210 Datasheet (PDF)
0.1. r07ds0409ej 2sk3210ls.pdf 
Size:164K _renesas
Preliminary Datasheet 2SK3210(L), 2SK3210(S) R07DS0409EJ0400 (Previous: REJ03G0414-0300) Silicon N Channel MOS FET Rev.4.00 High Speed Power Switching May 16, 2011 Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B
0.2. 2sk3210.pdf Size:157K _renesas
2SK3210(L), 2SK3210(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G0414-0300 (Previous ADE-208-760A (Z)) Rev.3.00 Sep. 30, 2004 Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK D 4 4 1. Gate 2. Drain G 3. Source 4. Drain 1 2 3 1 2 3 S Absolute Maximum Rating
8.1. 2sk3211.pdf Size:94K _renesas
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(L)) (Package name: LDPAK(S)-
8.2. rej03g1092 2sk3212ds.pdf Size:104K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.3. rej03g1091 2sk3211lsds.pdf Size:108K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.4. 2sk3212.pdf Size:94K _renesas
2SK3212 Silicon N Channel MOS FET High Speed Power Switching REJ03G1092-0300 (Previous: ADE-208-752A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3
8.5. 2sk321.pdf Size:205K _panasonic
8.6. 2sk3219-01mr.pdf Size:147K _fuji
FUJI POWER MOS-FET 2SK3219-01MR N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25
8.7. 2sk3214.pdf Size:28K _hitachi
2SK3214 Silicon N Channel MOS FET High Speed Power Switching ADE-208-763(Z) Target Specification 1st. Edition December 1998 Features • Low on-resistance RDS =130mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1. Gate 1 2. Drain(Flange) 2 3. Source 3 S 2SK3214 Absolute Maximum Ratings (Ta = 25° C) Item S
Datasheet: 2SK3159 , 2SK3160 , 2SK3161 , 2SK3162 , 2SK3163 , 2SK3177 , 2SK3203 , 2SK3209 , BS170 , 2SK3211 , 2SK3212 , 2SK3214 , 2SK3228 , 2SK3229 , 2SK3233 , 2SK3234 , 2SK3235 .
