2SK3210 - аналоги, даташиты, параметры транзистора

2SK3210 Datasheet (PDF)

..1. Size:157K renesas
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2SK3210(L), 2SK3210(S)Silicon N Channel MOS FETHigh Speed Power SwitchingREJ03G0414-0300(Previous ADE-208-760A (Z))Rev.3.00Sep. 30, 2004Features Low on-resistanceRDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V sourceOutlineLDPAKD4 41. Gate2. DrainG3. Source4. Drain123123SAbsolute Maximum Rating

0.1. Size:164K renesas
r07ds0409ej 2sk3210ls.pdf pdf_icon

Preliminary Datasheet 2SK3210(L), 2SK3210(S) R07DS0409EJ0400(Previous: REJ03G0414-0300)Silicon N Channel MOS FET Rev.4.00High Speed Power Switching May 16, 2011Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B

0.2. Size:357K inchange semiconductor
2sk3210s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3210SFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

0.3. Size:283K inchange semiconductor
2sk3210l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3210LFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Другие MOSFET... 2SK3159 , 2SK3160 , 2SK3161 , 2SK3162 , 2SK3163 , 2SK3177 , 2SK3203 , 2SK3209 , IRF540 , 2SK3211 , 2SK3212 , 2SK3214 , 2SK3228 , 2SK3229 , 2SK3233 , 2SK3234 , 2SK3235 .