JBL102E Datasheet. Specs and Replacement

Type Designator: JBL102E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 290 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 246 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 1318 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: TOLL

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JBL102E datasheet

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jbl102e.pdf pdf_icon

JBL102E

JBL102E 100V 2.0mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 246 A RDS(ON) (@ VGS = 10V) 2.0 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robotics Curr... See More ⇒

 8.1. Size:1062K  jiejie micro
jbl102t.pdf pdf_icon

JBL102E

JBL102T 100V 1.8mW TOLL N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 3.0 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 272 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.8 mW Halogen-free and RoHS-compliant Applications Power Management in Telecom., Indust... See More ⇒

 8.2. Size:557K  jiejie micro
jbl102y.pdf pdf_icon

JBL102E

JBL102Y 100V 2.7mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 206 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.7 Pb-free Lead Plating m... See More ⇒

 9.1. Size:788K  jiejie micro
jbl101n.pdf pdf_icon

JBL102E

JBL101N 100V 1.2mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 325 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.2 mW Applications Power Management in Computing, CE, IE 4.0, Communications Current Switching in DC... See More ⇒

Detailed specifications: JMSH1565AGS, JMSH1565AKS, JMSH1565AKSQ, JMSH1565APS, JMSH1565AUS, JMSH1566AG, JMSH1566AK, JMSH1566AKQ, IRFP260N, JBL102T, JBL102Y, JBL111P, JBL112T, JBL113P, JMCL0410AGD, JMCL0410AUD, JMH65R030PSFD

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