JBL111P Datasheet. Specs and Replacement

Type Designator: JBL111P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 256 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 1591 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: TOLL

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JBL111P datasheet

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JBL111P

110V, 256A, 1.6m N-channel Power SGT MOSFET JBL111P Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 110 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 256 A RDS(ON)_Typ(@VGS=10V 1.6 mW Applications Load Switch PWM Application Power Management PowerJE 10x12 ... See More ⇒

 9.1. Size:1272K  jiejie micro
 jbl112t.pdf pdf_icon

JBL111P

110V, 244A, 1.9m N-channel Power SGT MOSFET JBL112T Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 110 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 244 A RDS(ON)_Typ(@VGS=10V 1.9 mW Applications Load Switch PWM Application Power Management PowerJE 10x12 ... See More ⇒

 9.2. Size:1259K  jiejie micro
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JBL111P

110V, 196A, 5.3m N-channel Power SGT MOSFET JBL113P Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 110 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 196 A RDS(ON)_Typ(@VGS=10V 3.3 mW Applications RDS(ON)_Typ(@VGS=6V 5.3 mW Load Switch PWM Application Power ... See More ⇒

Detailed specifications: JMSH1565APS, JMSH1565AUS, JMSH1566AG, JMSH1566AK, JMSH1566AKQ, JBL102E, JBL102T, JBL102Y, IRF3710, JBL112T, JBL113P, JMCL0410AGD, JMCL0410AUD, JMH65R030PSFD, JMH65R040ASFD, JMH65R040ASFDQ, JMH65R040PSFD

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