All MOSFET. JBL112T Datasheet

 

JBL112T Datasheet and Replacement


   Type Designator: JBL112T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 244 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 1479 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: POWERJE-10X12
 

 JBL112T substitution

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JBL112T Datasheet (PDF)

 ..1. Size:1272K  jiejie micro
 jbl112t.pdf pdf_icon

JBL112T

110V, 244A, 1.9m N-channel Power SGT MOSFETJBL112TProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 110 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 244 ARDS(ON)_Typ(@VGS=10V 1.9 mWApplications Load Switch PWM Application Power ManagementPowerJE10x12

 9.1. Size:1257K  jiejie micro
 jbl111p.pdf pdf_icon

JBL112T

110V, 256A, 1.6m N-channel Power SGT MOSFETJBL111PProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 110 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 256 ARDS(ON)_Typ(@VGS=10V 1.6 mWApplications Load Switch PWM Application Power ManagementPowerJE10x12

 9.2. Size:1259K  jiejie micro
 jbl113p.pdf pdf_icon

JBL112T

110V, 196A, 5.3m N-channel Power SGT MOSFETJBL113PProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 110 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 196 ARDS(ON)_Typ(@VGS=10V 3.3 mWApplications RDS(ON)_Typ(@VGS=6V 5.3 mW Load Switch PWM Application Power

Datasheet: JMSH1565AUS , JMSH1566AG , JMSH1566AK , JMSH1566AKQ , JBL102E , JBL102T , JBL102Y , JBL111P , IRFB4227 , JBL113P , JMCL0410AGD , JMCL0410AUD , JMH65R030PSFD , JMH65R040ASFD , JMH65R040ASFDQ , JMH65R040PSFD , JMH65R070PCFD .

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