JBL113P Spec and Replacement
Type Designator: JBL113P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 313 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 196 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 915 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: TOLL
JBL113P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JBL113P Specs
jbl113p.pdf
110V, 196A, 5.3m N-channel Power SGT MOSFET JBL113P Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 110 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 196 A RDS(ON)_Typ(@VGS=10V 3.3 mW Applications RDS(ON)_Typ(@VGS=6V 5.3 mW Load Switch PWM Application Power ... See More ⇒
jbl111p.pdf
110V, 256A, 1.6m N-channel Power SGT MOSFET JBL111P Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 110 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 256 A RDS(ON)_Typ(@VGS=10V 1.6 mW Applications Load Switch PWM Application Power Management PowerJE 10x12 ... See More ⇒
jbl112t.pdf
110V, 244A, 1.9m N-channel Power SGT MOSFET JBL112T Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 110 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 244 A RDS(ON)_Typ(@VGS=10V 1.9 mW Applications Load Switch PWM Application Power Management PowerJE 10x12 ... See More ⇒
Detailed specifications: JMSH1566AG , JMSH1566AK , JMSH1566AKQ , JBL102E , JBL102T , JBL102Y , JBL111P , JBL112T , AON6414A , JMCL0410AGD , JMCL0410AUD , JMH65R030PSFD , JMH65R040ASFD , JMH65R040ASFDQ , JMH65R040PSFD , JMH65R070PCFD , JMH65R070PFFD .
History: VBA2625 | AP4406A | F4N60 | PTY12HN06 | F50N06 | RJK0390DPA
Keywords - JBL113P MOSFET specs
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