JMPC25N50BJ Datasheet and Replacement
Type Designator: JMPC25N50BJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 305 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO220
JMPC25N50BJ substitution
JMPC25N50BJ Datasheet (PDF)
jmpc25n50bj.pdf
JMPC25N50BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 500V, 25A Load SwitchRDS(ON)
jmpc25n60bj.pdf
600V, 25A, 282m N-channel Power Planar MOSFETJMPC25N60BJProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 600 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 25 ARDS(ON)_Typ(@VGS=10V 282 mWApplications Load Switch PWM Application Power ManagementDG S
jmpc20n60bj.pdf
JMPC20N60BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 600V, 20A Load SwitchRDS(ON)
jmpc20n65bj.pdf
JMPC20N65BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 650V, 20A Load SwitchRDS(ON)
Datasheet: JMPC13N50BJ , JMPC15N50BJ , JMPC16N60BJ , JMPC16N65BJ , JMPC18N20BJ , JMPC18N50BJ , JMPC20N60BJ , JMPC20N65BJ , IRFB3607 , JMPC25N60BJ , JMPC28N20BJ , JMSH0601AG , JMSH0601AGQ , JMSH0601ATL , JMSH0601ATLQ , JMSH0601BG , JMSH0601BGQ .
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MOSFET: JMSH0603PK | JMSH0603PGQ | JMSH0603PG | JMSH0603PE | JMSH0603MGQ | JMSH0603AKQ | JMSH0603AK | JMSH0601PTL | JMSH0601BGQ | JMSH0601BG | JMSH0601ATLQ | JMSH0601ATL | JMSH0601AGQ | JMSH0601AG | JMPC28N20BJ | JMPC25N60BJ
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