JMPE18N20BJ Datasheet. Specs and Replacement

Type Designator: JMPE18N20BJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 92 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.157 Ohm

Package: TO263

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JMPE18N20BJ datasheet

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JMPE18N20BJ

200V, 23A, 121m N-channel Power Planar MOSFET JMPE18N20BJ Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 200 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 23 A RDS(ON)_Typ(@VGS=10V 121 mW Applications Load Switch PWM Application Power Management D G S ... See More ⇒

Detailed specifications: JMSH1504ATLQ, JMSH1504CTL, JMSH1504NC, JMSH1504NE, JMSH1504NE7, JMSH1504NS, JMSH1504NTL, JMSH1505ATL, 2N60, JMPE34N20BJ, JMPF10N60BJ, JMPF10N65BJ, JMPF12N60BJ, JMPF12N65BJ, JMPF13N50BJ, JMPF15N50BJ, JMPF16N60BJ

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