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JMPE18N20BJ Spec and Replacement


   Type Designator: JMPE18N20BJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.157 Ohm
   Package: TO263

 JMPE18N20BJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JMPE18N20BJ Specs

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JMPE18N20BJ

200V, 23A, 121m N-channel Power Planar MOSFET JMPE18N20BJ Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 200 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 23 A RDS(ON)_Typ(@VGS=10V 121 mW Applications Load Switch PWM Application Power Management D G S ... See More ⇒

Detailed specifications: JMSH1504ATLQ , JMSH1504CTL , JMSH1504NC , JMSH1504NE , JMSH1504NE7 , JMSH1504NS , JMSH1504NTL , JMSH1505ATL , 2N60 , JMPE34N20BJ , JMPF10N60BJ , JMPF10N65BJ , JMPF12N60BJ , JMPF12N65BJ , JMPF13N50BJ , JMPF15N50BJ , JMPF16N60BJ .

History: PMV30XPEA

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