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JMPE34N20BJ Spec and Replacement


   Type Designator: JMPE34N20BJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 84 nS
   Cossⓘ - Output Capacitance: 159 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
   Package: TO263

 JMPE34N20BJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JMPE34N20BJ Specs

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JMPE34N20BJ

200V, 35A, 66m N-channel Power Planar MOSFET JMPE34N20BJ Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 200 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 35 A RDS(ON)_Typ(@VGS=10V 66 mW Applications Load Switch PWM Application Power Management D G S TO... See More ⇒

Detailed specifications: JMSH1504CTL , JMSH1504NC , JMSH1504NE , JMSH1504NE7 , JMSH1504NS , JMSH1504NTL , JMSH1505ATL , JMPE18N20BJ , 8N60 , JMPF10N60BJ , JMPF10N65BJ , JMPF12N60BJ , JMPF12N65BJ , JMPF13N50BJ , JMPF15N50BJ , JMPF16N60BJ , JMPF16N65BJ .

History: FQP10N60

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