JMPE34N20BJ Datasheet. Specs and Replacement

Type Designator: JMPE34N20BJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 84 nS

Cossⓘ - Output Capacitance: 159 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm

Package: TO263

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JMPE34N20BJ datasheet

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JMPE34N20BJ

200V, 35A, 66m N-channel Power Planar MOSFET JMPE34N20BJ Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 200 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 35 A RDS(ON)_Typ(@VGS=10V 66 mW Applications Load Switch PWM Application Power Management D G S TO... See More ⇒

Detailed specifications: JMSH1504CTL, JMSH1504NC, JMSH1504NE, JMSH1504NE7, JMSH1504NS, JMSH1504NTL, JMSH1505ATL, JMPE18N20BJ, 8N60, JMPF10N60BJ, JMPF10N65BJ, JMPF12N60BJ, JMPF12N65BJ, JMPF13N50BJ, JMPF15N50BJ, JMPF16N60BJ, JMPF16N65BJ

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