All MOSFET. JMPE34N20BJ Datasheet

 

JMPE34N20BJ Datasheet and Replacement


   Type Designator: JMPE34N20BJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 47 nC
   tr ⓘ - Rise Time: 84 nS
   Cossⓘ - Output Capacitance: 159 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
   Package: TO263
 

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JMPE34N20BJ Datasheet (PDF)

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JMPE34N20BJ

200V, 35A, 66m N-channel Power Planar MOSFETJMPE34N20BJProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 200 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 35 ARDS(ON)_Typ(@VGS=10V 66 mWApplications Load Switch PWM Application Power ManagementDG STO

Datasheet: JMSH1504CTL , JMSH1504NC , JMSH1504NE , JMSH1504NE7 , JMSH1504NS , JMSH1504NTL , JMSH1505ATL , JMPE18N20BJ , K2611 , JMPF10N60BJ , JMPF10N65BJ , JMPF12N60BJ , JMPF12N65BJ , JMPF13N50BJ , JMPF15N50BJ , JMPF16N60BJ , JMPF16N65BJ .

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