SI4542DY Datasheet. Specs and Replacement
Type Designator: SI4542DY 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 185 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SO-8
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SI4542DY substitution
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SI4542DY datasheet
si4542dy.pdf
January 2001 Si4542DY 30V Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Q1 N-Channel Fairchild s advanced PowerTrench process that has 6 A, 30 V RDS(on) = 28 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RDS(on) = 35 m @ VGS... See More ⇒
si4542dy.pdf
Si4542DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 10 V 6.9 TrenchFET Power MOSFET N-Channel 30 0.035 at VGS = 4.5 V 5.8 100 % Rg Tested 0.032 at VGS = - 10 V - 6.1 Compliant to RoHS Directive 2002/95/EC P-Channel - 30 0.045... See More ⇒
si4542dy.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,... See More ⇒
si4542dy.pdf
SI4542DY www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VGS... See More ⇒
Detailed specifications: NDC7001C, FDMB2307NZ, NDS331N, RFD14N05SM9A, SI3443DV, SI4532DY, FDMA905P, FDME905PT, BS170, FDC8886, FCP190N60, SSN1N45B, DMG1012T, DMG1012UW, DMG1024UV, DMG2302U, DMG3414U
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