SI4542DY - описание и поиск аналогов

January 2001 Si4542DY 30V Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Q1 N-Channel Fairchild s advanced PowerTrench process that has 6 A, 30 V RDS(on) = 28 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RDS(on) = 35 m @ VGS

Si4542DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 10 V 6.9 TrenchFET Power MOSFET N-Channel 30 0.035 at VGS = 4.5 V 5.8 100 % Rg Tested 0.032 at VGS = - 10 V - 6.1 Compliant to RoHS Directive 2002/95/EC P-Channel - 30 0.045

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SI4542DY www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VGS

Si4544DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.035 at VGS = 10 V 6.5 TrenchFET Power MOSFETs N-Channel 30 0.050 at VGS = 4.5 V 5.4 Compliant to RoHS Directive 2002/95/EC 0.045 at VGS = - 10 V 5.7 P-Channel - 30 0.090 at VGS = -