JMPK4N60BJ Datasheet. Specs and Replacement

Type Designator: JMPK4N60BJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.52 Ohm

Package: TO252

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JMPK4N60BJ datasheet

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JMPK4N60BJ

JMPK4N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 4A Load Switch RDS(ON) ... See More ⇒

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JMPK4N60BJ

JMPK4N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 4A Load Switch RDS(ON) ... See More ⇒

Detailed specifications: JMPF10N65BJ, JMPF12N60BJ, JMPF12N65BJ, JMPF13N50BJ, JMPF15N50BJ, JMPF16N60BJ, JMPF16N65BJ, JMPF18N50BJ, IRF830, JMPK4N65BJ, JMPK5N50BJ, JMPK630BJ, JMPK7N65BJ, JMSH1001AE7, JMSH1001AE7Q, JMSH1001ATL, JMSH1001ATLQ

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