JMPK4N60BJ Datasheet and Replacement
Type Designator: JMPK4N60BJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 61 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.52 Ohm
Package: TO252
JMPK4N60BJ substitution
JMPK4N60BJ Datasheet (PDF)
jmpk4n60bj.pdf
JMPK4N60BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 600V, 4A Load SwitchRDS(ON)
jmpk4n65bj.pdf
JMPK4N65BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 650V, 4A Load SwitchRDS(ON)
Datasheet: JMPF10N65BJ , JMPF12N60BJ , JMPF12N65BJ , JMPF13N50BJ , JMPF15N50BJ , JMPF16N60BJ , JMPF16N65BJ , JMPF18N50BJ , IRF1405 , JMPK4N65BJ , JMPK5N50BJ , JMPK630BJ , JMPK7N65BJ , JMSH1001AE7 , JMSH1001AE7Q , JMSH1001ATL , JMSH1001ATLQ .
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