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JMPK4N60BJ Spec and Replacement


   Type Designator: JMPK4N60BJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.52 Ohm
   Package: TO252

 JMPK4N60BJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JMPK4N60BJ Specs

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JMPK4N60BJ

JMPK4N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 4A Load Switch RDS(ON) ... See More ⇒

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JMPK4N60BJ

JMPK4N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 4A Load Switch RDS(ON) ... See More ⇒

Detailed specifications: JMPF10N65BJ , JMPF12N60BJ , JMPF12N65BJ , JMPF13N50BJ , JMPF15N50BJ , JMPF16N60BJ , JMPF16N65BJ , JMPF18N50BJ , IRF830 , JMPK4N65BJ , JMPK5N50BJ , JMPK630BJ , JMPK7N65BJ , JMSH1001AE7 , JMSH1001AE7Q , JMSH1001ATL , JMSH1001ATLQ .

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