JMPK7N65BJ Spec and Replacement
Type Designator: JMPK7N65BJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 69 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO252
JMPK7N65BJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JMPK7N65BJ Specs
jmpk7n65bj.pdf
JMPK7N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 7A Load Switch RDS(ON) ... See More ⇒
Detailed specifications: JMPF15N50BJ , JMPF16N60BJ , JMPF16N65BJ , JMPF18N50BJ , JMPK4N60BJ , JMPK4N65BJ , JMPK5N50BJ , JMPK630BJ , AON7403 , JMSH1001AE7 , JMSH1001AE7Q , JMSH1001ATL , JMSH1001ATLQ , JMSH1001BTL , JMSH1001MTL , JMSH1001NC , JMSH1001NE .
History: JMSH1001AE7Q
Keywords - JMPK7N65BJ MOSFET specs
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History: JMSH1001AE7Q
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