All MOSFET. JMSH1001AE7 Datasheet

 

JMSH1001AE7 Datasheet and Replacement


   Type Designator: JMSH1001AE7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 290 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 2091 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO263-7L
 

 JMSH1001AE7 substitution

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JMSH1001AE7 Datasheet (PDF)

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JMSH1001AE7

JMSH1001AE7100V 1.6m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 290 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial

 0.1. Size:350K  jiejie micro
 jmsh1001ae7q.pdf pdf_icon

JMSH1001AE7

JMSH1001AE7Q100V 1.6m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applica

 5.1. Size:622K  jiejie micro
 jmsh1001atlq.pdf pdf_icon

JMSH1001AE7

JMSH1001ATLQ100V 1.3mW TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 479 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.3 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicat

 5.2. Size:325K  jiejie micro
 jmsh1001atl.pdf pdf_icon

JMSH1001AE7

JMSH1001ATL100V 1.3m TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 411 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.3 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indust

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Datasheet: JMPF16N60BJ , JMPF16N65BJ , JMPF18N50BJ , JMPK4N60BJ , JMPK4N65BJ , JMPK5N50BJ , JMPK630BJ , JMPK7N65BJ , IRFZ48N , JMSH1001AE7Q , JMSH1001ATL , JMSH1001ATLQ , JMSH1001BTL , JMSH1001MTL , JMSH1001NC , JMSH1001NE , JMSH1001NE7 .

History: JMPK630BJ | DHS025N88F | JMSH1504AE7 | DHS046N10D

Keywords - JMSH1001AE7 MOSFET datasheet

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