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JMSH1001AE7 Spec and Replacement


   Type Designator: JMSH1001AE7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 290 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 2091 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO263-7L

 JMSH1001AE7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JMSH1001AE7 Specs

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JMSH1001AE7

JMSH1001AE7 100V 1.6m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 290 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.6 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial ... See More ⇒

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JMSH1001AE7

JMSH1001AE7Q 100V 1.6m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applica... See More ⇒

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JMSH1001AE7

JMSH1001ATLQ 100V 1.3mW TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 479 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicat... See More ⇒

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JMSH1001AE7

JMSH1001ATL 100V 1.3m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 411 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indust... See More ⇒

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Detailed specifications: JMPF16N60BJ , JMPF16N65BJ , JMPF18N50BJ , JMPK4N60BJ , JMPK4N65BJ , JMPK5N50BJ , JMPK630BJ , JMPK7N65BJ , K2611 , JMSH1001AE7Q , JMSH1001ATL , JMSH1001ATLQ , JMSH1001BTL , JMSH1001MTL , JMSH1001NC , JMSH1001NE , JMSH1001NE7 .

History: JMSH1001AE7Q

Keywords - JMSH1001AE7 MOSFET specs

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