JMSH1001PTL Datasheet. Specs and Replacement
Type Designator: JMSH1001PTL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 367 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 4368 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: TOLL
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JMSH1001PTL datasheet
..1. Size:1262K jiejie micro
jmsh1001ptl.pdf 
100V, 367A, 1.2m N-channel Power SGT MOSFET JMSH1001PTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 367 A RDS(ON)_Typ(@VGS=10V 1.2 mW Applications Load Switch PWM Application Power Management PowerJE 10... See More ⇒
6.1. Size:1263K jiejie micro
jmsh1001mtl.pdf
100V, 467A, 1.0m N-channel Power SGT MOSFET JMSH1001MTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 467 A RDS(ON)_Typ(@VGS=10V 1.0 mW Applications Load Switch PWM Application Power Management PowerJE 10... See More ⇒
6.2. Size:1257K jiejie micro
jmsh1001ntlq.pdf
100V, 312A, 1.7m N-channel Power SGT MOSFET JMSH1001NTLQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 2.9 V 100% Vds Tested ID(@VGS=10V) 312 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 1.7 mW AEC-Q101 Qualified Applications Load Switch PWM Appli... See More ⇒
6.3. Size:1183K jiejie micro
jmsh1001ntl.pdf
100V, 400A, 1.4m N-channel Power SGT MOSFET JMSH1001NTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 400 A RDS(ON)_Typ(@VGS=10V 1.4 mW Applications Load Switch PWM Application Power Management PowerJE 10... See More ⇒
6.4. Size:622K jiejie micro
jmsh1001atlq.pdf
JMSH1001ATLQ 100V 1.3mW TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 479 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicat... See More ⇒
6.5. Size:1182K jiejie micro
jmsh1001ne7.pdf
100V, 300A, 1.4m N-channel Power SGT MOSFET JMSH1001NE7 Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 300 A RDS(ON)_Typ(@VGS=10V 1.4 mW Applications Load Switch PWM Application Power Management TO-263 -7L ... See More ⇒
6.6. Size:325K jiejie micro
jmsh1001atl.pdf
JMSH1001ATL 100V 1.3m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 411 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indust... See More ⇒
6.7. Size:365K jiejie micro
jmsh1001nc jmsh1001ne.pdf
JMSH1001NC JMSH1001NE 100V 1.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 353 A RDS(ON)_Typ (@ VGS = 10V) 1.6 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, ... See More ⇒
6.8. Size:327K jiejie micro
jmsh1001btl.pdf
JMSH1001BTL 100V 1.7m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 300 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.7 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indus... See More ⇒
6.9. Size:305K jiejie micro
jmsh1001ae7.pdf
JMSH1001AE7 100V 1.6m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 290 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.6 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial ... See More ⇒
6.10. Size:353K jiejie micro
jmsh1001ns.pdf
JMSH1001NS 100V 1.9m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 308 A RDS(ON)_Typ (@ VGS = 10V) 1.9 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, R... See More ⇒
6.11. Size:350K jiejie micro
jmsh1001ae7q.pdf
JMSH1001AE7Q 100V 1.6m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applica... See More ⇒
Detailed specifications: JMSH1001BTL, JMSH1001MTL, JMSH1001NC, JMSH1001NE, JMSH1001NE7, JMSH1001NS, JMSH1001NTL, JMSH1001NTLQ, IRF740, JMSH1513AC, JMSH1513AE, JMSH1513AG, JMSH1516AC, JMSH1516AE, JMSH1516AEQ, JMSH1516AG, JMSH1516PC
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