JMSH1001PTL
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: JMSH1001PTL
Маркировка: SH1001P
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 357
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3.7
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 367
A
Tj ⓘ - Максимальная температура канала: 150
°C
Qg ⓘ -
Общий заряд затвора: 178
nC
tr ⓘ -
Время нарастания: 44
ns
Cossⓘ - Выходная емкость: 4368
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0016
Ohm
Тип корпуса:
TOLL
Аналог (замена) для JMSH1001PTL
-
подбор ⓘ MOSFET транзистора по параметрам
JMSH1001PTL
Datasheet (PDF)
..1. Size:1262K jiejie micro
jmsh1001ptl.pdf 
100V, 367A, 1.2m N-channel Power SGT MOSFETJMSH1001PTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 367 ARDS(ON)_Typ(@VGS=10V 1.2 mWApplications Load Switch PWM Application Power ManagementPowerJE10
6.1. Size:1263K jiejie micro
jmsh1001mtl.pdf 
100V, 467A, 1.0m N-channel Power SGT MOSFETJMSH1001MTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 467 ARDS(ON)_Typ(@VGS=10V 1.0 mWApplications Load Switch PWM Application Power ManagementPowerJE10
6.2. Size:1257K jiejie micro
jmsh1001ntlq.pdf 
100V, 312A, 1.7m N-channel Power SGT MOSFETJMSH1001NTLQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 100 V 100% UIS TestedVGS(th)_Typ 2.9 V 100% Vds TestedID(@VGS=10V) 312 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 1.7 mW AEC-Q101 QualifiedApplications Load Switch PWM Appli
6.3. Size:1183K jiejie micro
jmsh1001ntl.pdf 
100V, 400A, 1.4m N-channel Power SGT MOSFETJMSH1001NTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 400 ARDS(ON)_Typ(@VGS=10V 1.4 mWApplications Load Switch PWM Application Power ManagementPowerJE10
6.4. Size:622K jiejie micro
jmsh1001atlq.pdf 
JMSH1001ATLQ100V 1.3mW TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 479 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.3 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicat
6.5. Size:1182K jiejie micro
jmsh1001ne7.pdf 
100V, 300A, 1.4m N-channel Power SGT MOSFETJMSH1001NE7Product SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 300 ARDS(ON)_Typ(@VGS=10V 1.4 mWApplications Load Switch PWM Application Power ManagementTO-263 -7L
6.6. Size:325K jiejie micro
jmsh1001atl.pdf 
JMSH1001ATL100V 1.3m TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 411 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.3 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indust
6.7. Size:365K jiejie micro
jmsh1001nc jmsh1001ne.pdf 
JMSH1001NCJMSH1001NE100V 1.6m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 353 A RDS(ON)_Typ (@ VGS = 10V)1.6 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool,
6.8. Size:327K jiejie micro
jmsh1001btl.pdf 
JMSH1001BTL100V 1.7m TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 300 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.7 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indus
6.9. Size:305K jiejie micro
jmsh1001ae7.pdf 
JMSH1001AE7100V 1.6m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 290 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial
6.10. Size:353K jiejie micro
jmsh1001ns.pdf 
JMSH1001NS100V 1.9m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 308 A RDS(ON)_Typ (@ VGS = 10V)1.9 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicle, R
6.11. Size:350K jiejie micro
jmsh1001ae7q.pdf 
JMSH1001AE7Q100V 1.6m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applica
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