JMSH0702PE Datasheet and Replacement. Cross Reference Search

..1. Size:1121K jiejie micro
jmsh0702pe.pdf pdf_icon

70V, 230A, 1.8m N-channel Power SGT MOSFETJMSH0702PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS 70 V 100% Vds TESTEDVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 230 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.8 mWApplications Load Switch PWM Application Power Managem

7.1. Size:1148K jiejie micro
jmsh0704pc.pdf pdf_icon

70V, 171A, 3.5m N-channel Power SGT MOSFETJMSH0704PCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS 70 V 100% Vds TESTEDVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 171 ARDS(ON)_Typ(@VGS=10V 3.5 Pb-free plating mWApplications Load Switch PWM Application Power Manage

7.2. Size:1121K jiejie micro
jmsh0704pe.pdf pdf_icon

70V, 171A, 3.2m N-channel Power SGT MOSFETJMSH0704PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS70 V 100% Vds TESTEDVGS(th)_Typ3.0 V Halogen-free; RoHS-compliantID(@VGS=10V)171 ARDS(ON)_Typ(@VGS=10V Pb-free plating 3.2 mWApplications Load Switch PWM Application Power Man

9.1. Size:332K jiejie micro
jmsh0402bgq.pdf pdf_icon

JMSH0402BGQ40V 2.0m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low ON-resistance, RDS(ON)Parameter Typ. Unit VDS40 V Low Gate Charge, Qg VGS(th)2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 166 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)2.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN5x6-

9.2. Size:1293K jiejie micro
jmsh0602pk.pdf pdf_icon

60V, 112A, 1.9m N-channel Power SGT MOSFETJMSH0602PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 60 V 100% Vds TESTEDVGS(th)_Typ 2.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 112 A Pb-free platingRDS(ON)_Typ(@VGS=10V 1.9 mWApplications Load Switch PWM Application Power Manag

9.3. Size:1250K jiejie micro
jmsh0801pe.pdf pdf_icon

80V, 313A, 1.5m N-channel Power SGT MOSFETJMSH0801PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 313 ARDS(ON)_Typ(@VGS=10V 1.5 mWApplications Load Switch PWM Application Power ManagementTO-263 -3L S

9.4. Size:350K jiejie micro
jmsh0803ngs.pdf pdf_icon

JMSH0803NGS80V 3.2m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS80 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 153 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 m Halogen-free and RoHS-compliantApplications Power Management in Telecom., Industrial Au

9.5. Size:1235K jiejie micro
jmsh0406pu.pdf pdf_icon

40V, 54A, 4.1m N-channel Power SGT MOSFETJMSH0406PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 54 A Pb-free platingRDS(ON)_Typ(@VGS=10V 4.1 mWApplications Load Switch PWM Application Power Managem

9.6. Size:349K jiejie micro
jmsh0606ak.pdf pdf_icon

JMSH0606AK60V 4.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 90 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.4 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Autom

9.7. Size:305K jiejie micro
jmsh0406ak.pdf pdf_icon

JMSH0406AK40V 5.0m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 70 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.0 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, I

9.8. Size:324K jiejie micro
jmsh0401cg.pdf pdf_icon

JMSH0401CG40V 1.1m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low RDS(ON)Parameter Value Unit VDS40 V Low Gate Charge VGS(th)2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 240 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)1.1 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Communicat

9.9. Size:345K jiejie micro
jmsh0602ag.pdf pdf_icon

JMSH0602AG60V 1.9m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 175 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.9 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indus

9.10. Size:401K jiejie micro
jmsh0401agq.pdf pdf_icon

JMSH0401AGQ40V 1.3m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 197 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

9.11. Size:1201K jiejie micro
jmsh0606pgq.pdf pdf_icon

60V, 118A, 4.5m N-channel Power SGT MOSFETJMSH0606PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameters Value Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 2.8 V 100% Vds TestedID(@VGS=10V) 118 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.5 mW AEC-Q101 QualifiedApplications Load Switch PWM Applicatio

9.12. Size:345K jiejie micro
jmsh0406ag.pdf pdf_icon

JMSH0406AG40V 4.1m N-Ch Power MOSFETProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS Low Gate Charge, Qg 40 V VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 86 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.1 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE

9.13. Size:326K jiejie micro
jmsh040sagq.pdf pdf_icon

JMSH040SAGQ40V 0.56m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 400 A RDS(ON)_Typ (@ VGS = 10V)0.56 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive ApplicationsPDFN5x6-

9.14. Size:1203K jiejie micro
jmsh0401mgq.pdf pdf_icon

40V, 223A, 1.4m N-channel Power SGT MOSFETJMSH0401MGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 40 VVGS(th)_Typ 2.7 V 100% UIS TestedID(@VGS=10V) 223 A 100% Vds TestedRDS(ON)_Typ(@VGS=10V 1.4 mW Halogen-free; RoHS-compliant AEC-Q101 QualifiedApplications Load Switch PWM Applicat

9.15. Size:412K jiejie micro
jmsh0601bgq.pdf pdf_icon

JMSH0601BGQ60V 1.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 314 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

9.16. Size:1174K jiejie micro
jmsh0406pgdq.pdf pdf_icon

40V, 51A, 5.1m Dual N-channel Power SGT MOSFETJMSH0406PGDQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 2.8 V 100% Vds TestedID(@VGS=10V) 51 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 5.1 mW AEC-Q101 QualifiedApplications Load Switch PWM Appli

9.17. Size:1236K jiejie micro
jmsh0406pg.pdf pdf_icon

40V, 103A, 3.9m N-channel Power SGT MOSFETJMSH0406PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 103 ARDS(ON)_Typ(@VGS=10V 3.9 mWApplications Load Switch PWM Application Power ManagementDG SPDFN

9.18. Size:1225K jiejie micro
jmsh0403pghw.pdf pdf_icon

40V, 131A, 3.0m N-channel Power SGT MOSFETJMSH0403PGHWProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 131 ARDS(ON)_Typ(@VGS=10V 3.0 mWApplications Load Switch PWM Application Power ManagementPDFN5X6-8L-H

9.19. Size:1174K jiejie micro
jmsh0401pts.pdf pdf_icon

40V, 361A, 0.9m N-channel Power SGT MOSFETJMSH0401PTSProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 361 ARDS(ON)_Typ(@VGS=10V 0.9 mWApplications Load Switch PWM Application Power ManagementDG SSch

9.20. Size:353K jiejie micro
jmsh0402akq.pdf pdf_icon

JMSH0402AKQ40V 2.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 170 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

9.21. Size:366K jiejie micro
jmsh0406au.pdf pdf_icon

JMSH0406AU40V 4.3m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 58 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.3 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE

9.22. Size:1252K jiejie micro
jmsh0406pkq.pdf pdf_icon

40V, 66A, 4.8m N-channel Power SGT MOSFETJMSH0406PKQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 3.0 V 100% Vds Tested ID(@VGS=10V) 66 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 4.8 mW AEC-Q101 QualifiedApplications Load Switch PWM Applicat

9.23. Size:1179K jiejie micro
jmsh0606pgd.pdf pdf_icon

60V, 88A, 4.1m Dual N-channel Power SGT MOSFETJMSH0606PGDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 88 ARDS(ON)_Typ(@VGS=10V 4.1 mWApplications Load Switch PWM Application Power ManagementPDFN5X6-8L

9.24. Size:389K jiejie micro
jmsh0603akq.pdf pdf_icon

JMSH0603AKQ60V 2.6m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 151 A RDS(ON) (@ VGS = 10V)2.6 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive ApplicationsTO-252-3L Top Vie

9.25. Size:1191K jiejie micro
jmsh0403pgq.pdf pdf_icon

40V, 143A, 2.5m N-channel Power SGT MOSFETJMSH0403PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 3.1 V 100% Vds TestedID(@VGS=10V) 143 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 2.5 mW AEC-Q101 QualifiedApplications Load Switch PWM Applicat

9.26. Size:355K jiejie micro
jmsh0401cgq.pdf pdf_icon

9.27. Size:399K jiejie micro
jmsh0601bg.pdf pdf_icon

JMSH0601BG60V 1.0m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 303 A RDS(ON)_Typ (@ VGS = 10V)1.0 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Management in Computing, CE,

9.28. Size:386K jiejie micro
jmsh0606akq.pdf pdf_icon

JMSH0606AKQ60V 4.4m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 95 A RDS(ON)_Typ (@ VGS = 10V)4.4 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive ApplicationsTO-252-3L T

9.29. Size:358K jiejie micro
jmsh0401atl.pdf pdf_icon

JMSH0401ATL40V 1.0m TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)_Typ2.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 336 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.0 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE

9.30. Size:1304K jiejie micro
jmsh0406pgd.pdf pdf_icon

40V, 50A, 4.9m N-channel Power SGT MOSFETJMSH0406PGDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 50 ARDS(ON)_Typ(@VGS=10V 4.9 mWApplications Load Switch PWM Application Power ManagementPDFN5X6-8L-DS

9.31. Size:379K jiejie micro
jmsh0805pc jmsh0805pe.pdf pdf_icon

JMSH0805PCJMSH0805PE80V 4.0m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS80 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 154 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.0 m Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-v

9.32. Size:335K jiejie micro
jmsh0402aeq.pdf pdf_icon

JMSH0402AEQ40V 1.3m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 253 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 1.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-263-3L

9.33. Size:1197K jiejie micro
jmsh0603pg.pdf pdf_icon

60V, 106A, 2.6m N-channel Power SGT MOSFETJMSH0603PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 106 ARDS(ON)_Typ(@VGS=10V 2.6 mWApplications Load Switch PWM Application Power ManagementDG SPDFN5

9.34. Size:388K jiejie micro
jmsh0805pk.pdf pdf_icon

JMSH0805PK80V 3.7m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS80 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 130 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.7 m Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicle, Robo

9.35. Size:342K jiejie micro
jmsh0601ag.pdf pdf_icon

JMSH0601AG60V 1.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 197 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.4 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Communic

9.36. Size:557K jiejie micro
jmsh0803ags.pdf pdf_icon

JMSH0803AGS80V 3.2mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS80 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 153 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 mW Halogen-free and RoHS-compliantApplications Power Management in Telecom., Industrial Automa

9.37. Size:320K jiejie micro
jmsh0602aeq.pdf pdf_icon

JMSH0602AEQ60V 2.0m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 224 A RDS(ON)_Typ (@ VGS = 10V)2.0 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive ApplicationsTO-263-3L

9.38. Size:1234K jiejie micro
jmsh0606pu.pdf pdf_icon

60V, 55A, 4.5m N-channel Power SGT MOSFETJMSH0606PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 55 A Pb-free platingRDS(ON)_Typ(@VGS=10V 4.5 mWApplications Load Switch PWM Application Power Managem

9.39. Size:1208K jiejie micro
jmsh0401pg.pdf pdf_icon

40V, 211A, 0.8m N-channel Power SGT MOSFETJMSH0401PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS 40 V 100% Vds TESTEDVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 211 A Pb-free platingRDS(ON)_Typ(@VGS=10V 0.8 mWApplications Load Switch PWM Application Power Manage

9.40. Size:1252K jiejie micro
jmsh0802pe.pdf pdf_icon

80V, 263A, 1.6m N-channel Power SGT MOSFETJMSH0802PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 263 ARDS(ON)_Typ(@VGS=10V 1.6 mWApplications Load Switch PWM Application Power ManagementTO-263 -3L S

9.41. Size:382K jiejie micro
jmsh0601atlq.pdf pdf_icon

JMSH0601ATLQ60V 1.2m TOLL N-Ch Power MOSFETProduct SummaryFeatures Ultralow ON-resistance, RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 328 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Appli

9.42. Size:1255K jiejie micro
jmsh0606pc.pdf pdf_icon

60V, 103A, 4.8m N-channel Power SGT MOSFETJMSH0606PCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 103 ARDS(ON)_Typ(@VGS=10V 4.8 mWApplications Load Switch PWM Application Power ManagementDG STO-2

9.43. Size:338K jiejie micro
jmsh0606ag.pdf pdf_icon

JMSH0606AG60V 3.7m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 98 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.7 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Autom

9.44. Size:1229K jiejie micro
jmsh0406pgq.pdf pdf_icon

40V, 106A, 4.1m N-channel Power SGT MOSFETJMSH0406PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 3.1 V 100% Vds TestedID(@VGS=10V) 106 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 4.1 mW AEC-Q101 QualifiedApplications Load Switch PWM Applica

9.45. Size:1235K jiejie micro
jmsh0403pu.pdf pdf_icon

40V, 75A, 2.4m N-channel Power SGT MOSFETJMSH0403PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 75 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.4 mWApplications Load Switch PWM Application Power Managem

9.46. Size:390K jiejie micro
jmsh0406agdq.pdf pdf_icon

JMSH0406AGDQ40V 5.2m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 68 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicatio

9.47. Size:632K jiejie micro
jmsh040sptsq.pdf pdf_icon

40V, 430A, 0.85m N-channel Power SGT MOSFETJMSH040SPTSQProduct SummaryFeatures Ultra-low ON-resistance RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 2.6 V 100% Vds TestedID(@VGS=10V) 430 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 0.85 m AEC-Q101 QualifiedApplications Load Switch PWM Appl

9.48. Size:1271K jiejie micro
jmsh0802mc.pdf pdf_icon

80V, 249A, 2.0m N-channel Power SGT MOSFETJMSH0802MCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 249 ARDS(ON)_Typ(@VGS=10V 2.0 mWApplications Load Switch PWM Application Power ManagementDG STO-22

9.49. Size:407K jiejie micro
jmsh0602akq.pdf pdf_icon

JMSH0602AKQ60V 2.2m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 206 A RDS(ON) (@ VGS = 10V)2.2 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive ApplicationsTO-252-3L Top Vie

9.50. Size:569K jiejie micro
jmsh0402agq.pdf pdf_icon

JMSH0402AGQ40V 1.6mW N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 182 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN

9.51. Size:386K jiejie micro
jmsh0602ac jmsh0602ae.pdf pdf_icon

JMSH0602ACJMSH0602AE60V 1.8m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low RDS(ON)Parameter Value Unit Low Gate Charge VDS60 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ3.0 V ID (@ VGS = 10V) (1) 195 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.8 m Halogen-free and RoHS-compliantApplications Power Management in Computing,

9.52. Size:1243K jiejie micro
jmsh0803mc.pdf pdf_icon

80V, 165A, 3.0m N-channel Power SGT MOSFETJMSH0803MCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 165 ARDS(ON)_Typ(@VGS=10V 3.0 mWApplications Load Switch PWM Application Power ManagementDG STO-22

9.53. Size:1236K jiejie micro
jmsh0406puq.pdf pdf_icon

40V, 57A, 4.1m N-channel Power SGT MOSFETJMSH0406PUQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 2.8 V 100% Vds TestedID(@VGS=10V) 57 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 4.1 mW AEC-Q101 Qualified Pb-free platingApplications Load Swit

9.54. Size:1175K jiejie micro
jmsh0401ptsq.pdf pdf_icon

40V, 381A, 0.9m N-channel Power SGT MOSFETJMSH0401PTSQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 2.6 V 100% Vds TestedID(@VGS=10V) 381 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 0.9 mW AEC-Q101 QualifiedApplications Load Switch PWM Applica

9.55. Size:343K jiejie micro
jmsh0606au.pdf pdf_icon

JMSH0606AU60V 4.6m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 62 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.6 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Autom

9.56. Size:1129K jiejie micro
jmsh0406pk.pdf pdf_icon

40V, 64A, 4.6m N-channel Power SGT MOSFETJMSH0406PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 64 ARDS(ON)_Typ(@VGS=10V 4.6 mWApplications Load Switch PWM Application Power ManagementDG STO-252-

9.57. Size:1256K jiejie micro
jmsh0804nc.pdf pdf_icon

80V, 148A, 3.8m N-channel Power SGT MOSFETJMSH0804NCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 148 ARDS(ON)_Typ(@VGS=10V 3.8 mWApplications Load Switch PWM Application Power ManagementDG SSche

9.58. Size:625K jiejie micro
jmsh0401atlq.pdf pdf_icon

JMSH0401ATLQ40V 1.0mW TOLL N-Ch Power MOSFETFeatures Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 337 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.0 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

9.59. Size:410K jiejie micro
jmsh0602agq.pdf pdf_icon

JMSH0602AGQ60V 1.9m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 168 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

9.60. Size:562K jiejie micro
jmsh0401atsq.pdf pdf_icon

JMSH0401ATSQ40V 0.9mW sTOLL N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Standard Level Threshold, VGS(th) VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 352 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)0.90 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automoti

9.61. Size:1281K jiejie micro
jmsh0603pgq.pdf pdf_icon

60V, 152A, 2.6m N-channel Power SGT MOSFETJMSH0603PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 2.6 V 100% Vds TestedID(@VGS=10V) 152 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 2.6 mW AEC-Q101 QualifiedApplications Load Switch PWM Applica

9.62. Size:402K jiejie micro
jmsh0401bgq.pdf pdf_icon

JMSH0401BGQ40V 0.90m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 276 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)0.90 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

9.63. Size:349K jiejie micro
jmsh0804ng.pdf pdf_icon

JMSH0804NG85V 3.1m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS85 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 137 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.1 m Halogen-free and RoHS-compliantApplications Power Management in Telecom., Industrial Aut

9.64. Size:368K jiejie micro
jmsh0403bgq.pdf pdf_icon

9.65. Size:377K jiejie micro
jmsh0401ag.pdf pdf_icon

JMSH0401AG40V 1.3m N-Ch Power MOSFETFeatures Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 190 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.3 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE

9.66. Size:285K jiejie micro
jmsh0406agd.pdf pdf_icon

JMSH0406AGD40V 5.2m Dual N-Ch Power MOSFETFeatures Product Summary Ultra-low ON-resistance, RDS(ON)Parameter Value Unit Low Gate Charge, Qg VDS40 V VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 64 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.2 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE

9.67. Size:1343K jiejie micro
jmsh0602pe.pdf pdf_icon

60V, 218A, 1.9m N-channel Power SGT MOSFETJMSH0602PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 218 ARDS(ON)_Typ(@VGS=10V 1.9 mWApplications Load Switch PWM Application Power ManagementTO-263 -3LSc

9.68. Size:350K jiejie micro
jmsh0606agq.pdf pdf_icon

JMSH0606AGQ60V 3.7m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 103 A RDS(ON)_Typ (@ VGS = 10V)3.7 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive ApplicationsPDFN5x6-

9.69. Size:1609K jiejie micro
jmsh0802me.pdf pdf_icon

80V, 254A, 1.8m N-channel Power SGT MOSFETJMSH0802MEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 254 ARDS(ON)_Typ(@VGS=10V 1.8 mWApplications Load Switch PWM Application Power ManagementDG STO-2

9.70. Size:1261K jiejie micro
jmsh0802ptl.pdf pdf_icon

80V, 333A, 1.3m N-channel Power SGT MOSFETJMSH0802PTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 333 ARDS(ON)_Typ(@VGS=10V 1.3 mWApplications Load Switch PWM Application Power ManagementPowerJE10x1

9.71. Size:349K jiejie micro
jmsh0603ak.pdf pdf_icon

JMSH0603AK60V 2.6m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 145 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.6 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Com

9.72. Size:1256K jiejie micro
jmsh0601ptl.pdf pdf_icon

60V, 332A, 1.2m N-channel Power SGT MOSFETJMSH0601PTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 332 ARDS(ON)_Typ(@VGS=10V 1.2 mWApplications Load Switch PWM Application Power ManagementPowerJE10x1

9.73. Size:1241K jiejie micro
jmsh0603pe.pdf pdf_icon

60V, 184A, 2.5m N-channel Power SGT MOSFETJMSH0603PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 184 ARDS(ON)_Typ(@VGS=10V 2.5 mWApplications Load Switch PWM Application Power ManagementDG STO-2

9.74. Size:1335K jiejie micro
jmsh0401pe.pdf pdf_icon

40V, 224A, 2.1m N-channel Power SGT MOSFETJMSH0401PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 224 ARDS(ON)_Typ(@VGS=10V 2.1 mWApplications Load Switch PWM Application Power ManagementDG SSche

9.75. Size:644K jiejie micro
jmsh0602pg.pdf pdf_icon

JMSH0602PG60V 1.6m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 200 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.6 mWApplications Power Management in Computing, CE, IE 4.0, Communications Current Switching in

9.76. Size:1350K jiejie micro
jmsh0803me.pdf pdf_icon

80V, 206A, 2.7m N-channel Power SGT MOSFETJMSH0803MEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 206 ARDS(ON)_Typ(@VGS=10V 2.7 mWApplications Load Switch PWM Application Power ManagementDG STO-2

9.77. Size:324K jiejie micro
jmsh0401bg.pdf pdf_icon

9.78. Size:1227K jiejie micro
jmsh0403pghwq.pdf pdf_icon

40V, 140A, 3.0m N-channel Power SGT MOSFETJMSH0403PGHWQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 3.1 V 100% Vds TestedID(@VGS=10V) 140 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 3.0 mW AEC-Q101 QualifiedApplications Load Switch PWM Applic

9.79. Size:1189K jiejie micro
jmsh0403pg.pdf pdf_icon

40V, 135A, 2.6m N-channel Power SGT MOSFETJMSH0403PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 135 ARDS(ON)_Typ(@VGS=10V 2.6 mWApplications Load Switch PWM Application Power ManagementDG SPDFN

9.80. Size:1193K jiejie micro
jmsh0401pgq.pdf pdf_icon

40V, 323A, 0.8m N-channel Power SGT MOSFETJMSH0401PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 2.7 V 100% Vds TestedID(@VGS=10V) 323 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 0.8 mW AEC-Q101 QualifiedApplications Load Switch PWM Applica

9.81. Size:1129K jiejie micro
jmsh0802mtl.pdf pdf_icon

80V, 285A, 1.4m N-channel Power SGT MOSFETJMSH0802MTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 80 V 100% Vds TESTEDVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 285 A Pb-free platingRDS(ON)_Typ(@VGS=10V 1.4 mWApplications Load Switch PWM Application Power Mana

9.82. Size:1258K jiejie micro
jmsh0803mtl.pdf pdf_icon

80V, 253A, 2.1 m N-channel Power SGT MOSFETJMSH0803MTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 253 ARDS(ON)_Typ(@VGS=10V 2.1 mWApplications Load Switch PWM Application Power ManagementPowerJE10x

9.83. Size:381K jiejie micro
jmsh0601atl.pdf pdf_icon

JMSH0601ATL60V 1.2m TOLL N-Ch Power MOSFETProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 348 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.2 m Halogen-free and RoHS-compliantApplications Power Management in Computi

9.84. Size:344K jiejie micro
jmsh0403bg.pdf pdf_icon

JMSH0403BG40V 2.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 139 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.2 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE,

9.85. Size:1262K jiejie micro
jmsh0801ptl.pdf pdf_icon

80V, 383A, 1.1m N-channel Power SGT MOSFETJMSH0801PTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 383 ARDS(ON)_Typ(@VGS=10V 1.1 mWApplications Load Switch PWM Application Power ManagementPowerJE10x1

9.86. Size:1190K jiejie micro
jmsh0606pg.pdf pdf_icon

60V, 114A, 4.5m N-channel Power SGT MOSFETJMSH0606PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 114 ARDS(ON)_Typ(@VGS=10V 4.5 mWApplications Load Switch PWM Application Power ManagementDG SPDFN

9.87. Size:1249K jiejie micro
jmsh0606pk.pdf pdf_icon

60V, 68A, 4.5m N-channel Power SGT MOSFETJMSH0606PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 68 ARDS(ON)_Typ(@VGS=10V 4.5 mWApplications Load Switch PWM Application Power ManagementDG STO-252

9.88. Size:415K jiejie micro
jmsh0601agq.pdf pdf_icon

JMSH0601AGQ60V 1.3m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 225 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

9.89. Size:652K jiejie micro
jmsh0603mgq.pdf pdf_icon

60V, 163A, 2.3m N-channel Power SGT MOSFETJMSH0603MGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 2.8 V 100% Vds TestedID(@VGS=10V) 163 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 2.3 m AEC-Q101 QualifiedApplications Load Switch PWM Applica

9.90. Size:1275K jiejie micro
jmsh0803pc.pdf pdf_icon

80V, 202A, 2.4m N-channel Power SGT MOSFETJMSH0803PCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 202 ARDS(ON)_Typ(@VGS=10V 2.4 mWApplications Load Switch PWM Application Power ManagementTO-220-3LSch

9.91. Size:399K jiejie micro
jmsh0406agq.pdf pdf_icon

JMSH0406AGQ40V 4.1m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.1 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications P

9.92. Size:323K jiejie micro
jmsh0403ag.pdf pdf_icon

JMSH0403AG40V 2.7m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 117 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)2.7 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Communicat

9.93. Size:316K jiejie micro
jmsh0605agd.pdf pdf_icon

JMSH0605AGD60V 4.7m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 54 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.7 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Auto

9.94. Size:1176K jiejie micro
jmsh0606pgdq.pdf pdf_icon

60V, 61A, 4.1m Dual N-channel Power SGT MOSFETJMSH0606PGDQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 2.7 V 100% Vds TestedID(@VGS=10V) 61 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.1 mW AEC-Q101 QualifiedApplications Load Switch PWM Appli

9.95. Size:1272K jiejie micro
jmsh0602pc.pdf pdf_icon

60V, 178A, 2.4m N-channel Power SGT MOSFETJMSH0602PCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 178 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.4 mWApplications Load Switch PWM Application Power Manag

9.96. Size:386K jiejie micro
jmsh0406buq.pdf pdf_icon

JMSH0406BUQ40V 4.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 59 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDF

9.97. Size:358K jiejie micro
jmsh0406akq.pdf pdf_icon

JMSH0406AKQ40V 5.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 73 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications T

9.98. Size:1281K jiejie micro
jmsh040spg.pdf pdf_icon

40V, 324A, 0.7m N-channel Power SGT MOSFETJMSH040SPGProduct SummaryFeatures Excellent RDS(ON) and Low Gate Charge ParametersValue UnitVDSS 40 V 100% UIS TestedVGS(th)_Typ 3.1 V 100% Vds TestedID(@VGS=10V) 324 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 0.7 mWApplications Load Switch PWM Application Power ManagementDG SPDFN5

9.99. Size:1291K jiejie micro
jmsh0803mg.pdf pdf_icon

80V, 162A, 2.5m N-channel Power SGT MOSFETJMSH0803MGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 80 V 100% Vds TESTEDVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 162 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.5 mWApplications Load Switch PWM Application Power Manag

9.100. Size:325K jiejie micro
jmsh040sag.pdf pdf_icon

JMSH040SAG40V 0.56m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low RDS(ON)Parameter Value Unit Low Gate Charge VDS40 V VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 384 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)0.56 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Co

9.101. Size:428K jiejie micro
jmsh0403aghwq.pdf pdf_icon

JMSH0403AGHWQ40V 2.7m Half-Bridge N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit 100% UIS Tested, 100% Rg Tested VDS40 V Pb-free Lead Plating VGS(th)_Typ2.8 V Halogen-free and RoHS-compliant ID (@ VGS = 10V) (1) 111 A RDS(ON)_Typ (@ VGS = 10V) AEC-Q101 Qualified for Automotive Applications 2.7 m Enhanced routing to reduce PCB layo

9.102. Size:1284K jiejie micro
jmsh040spgq.pdf pdf_icon

40V, 342A, 0.7m N-channel Power SGT MOSFETJMSH040SPGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 3.1 V 100% Vds TestedID(@VGS=10V) 342 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 0.7 mW AEC-Q101 QualifiedApplications Load Switch PWM Applica

9.103. Size:390K jiejie micro
jmsh0804nk.pdf pdf_icon

JMSH0804NK85V 3.3m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS85 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.3 m Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicle, Robo

9.104. Size:1272K jiejie micro
jmsh0603pk.pdf pdf_icon

60V, 86A, 2.8m N-channel Power SGT MOSFETJMSH0603PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 86 ARDS(ON)_Typ(@VGS=10V 2.8 mWApplications Load Switch PWM Application Power ManagementDG STO-252

9.105. Size:1190K jiejie micro
jmsh0402pg.pdf pdf_icon

40V, 202A, 1.4m N-channel Power SGT MOSFETJMSH0402PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 202 ARDS(ON)_Typ(@VGS=10V 1.4 mWApplications Load Switch PWM Application Power ManagementDG SPDFN

9.106. Size:349K jiejie micro
jmsh0602ak.pdf pdf_icon

JMSH0602AK60V 2.2m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 195 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 2.2 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Automation, C

9.107. Size:549K jiejie micro
jmsh0805pg.pdf pdf_icon

JMSH0805PG80V 4.5mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS80 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 117 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.5 mW Halogen-free and RoHS-compliantApplications Power Management in Telecom., Industrial Automat

9.108. Size:317K jiejie micro
jmsh0605agdq.pdf pdf_icon

JMSH0605AGDQ60V 4.7m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low RDS(ON)Parameter Value Unit VDS60 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 56 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.7 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive ApplicationsPDFN5x6-8L

9.109. Size:1338K jiejie micro
jmsh0804ne.pdf pdf_icon

80V, 164A, 3.3m N-channel Power SGT MOSFETJMSH0804NEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.4 V Halogen-free; RoHS-compliantID(@VGS=10V) 164 ARDS(ON)_Typ(@VGS=10V 3.3 mWApplications Load Switch PWM Application Power ManagementDG SSche

9.110. Size:1193K jiejie micro
jmsh0602pgq.pdf pdf_icon

60V, 179A, 1.6m N-channel Power SGT MOSFETJMSH0602PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 3.0 V 100% Vds TestedID(@VGS=10V) 179 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 1.6 mW AEC-Q101 QualifiedApplications Load Switch PWM Applicat

9.111. Size:586K jiejie micro
jmsh0403agq.pdf pdf_icon

JMSH0403AGQ40V 2.7mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 121 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 2.7 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN5x6-8LPin Conf

JMSH0702PE Datasheet (PDF)

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