JMSH1507PE Datasheet. Specs and Replacement

Type Designator: JMSH1507PE  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 240 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 133 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 557 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO263

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JMSH1507PE substitution

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JMSH1507PE datasheet

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JMSH1507PE

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JMSH1507PE

150V, 177A, 5.5m N-channel Power SGT MOSFET JMSH1507PS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 150 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 177 A Pb-free plating RDS(ON)_Typ(@VGS=10V 5.5 mW Applications Load Switch PWM Application Power Man... See More ⇒

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JMSH1507PE

JMSH1507AEQ 150V 5.2mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 150 V Low Gate Charge, Qg VGS(th)_Typ 3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 161 A RDS(ON)_Typ (@ VGS = 10V) 5.2 mW Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications ... See More ⇒

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JMSH1507PE

JMSH1507AC JMSH1507AE 150V 5.2mW N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% R Tested g ID (@ VGS = 10V) (1) 132 A RDS(ON)_Typ (@ VGS = 10V) 5.2 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indu... See More ⇒

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Detailed specifications: JMSH1103PE, JMSH1103TC, JMSH1103TE, JMSH1202PTL, JMSH1507AC, JMSH1507AE, JMSH1507AEQ, JMSH1507PC, 18N50, JMSH1507PS, JMSH1508AEQ, JMSH1509AC, JMSH1509AE, JMSH1509AG, JMSH1509AGQ, JMSH1509PC, JMSH1509PE

Keywords - JMSH1507PE MOSFET specs

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