JMH65R190APLN Datasheet. Specs and Replacement

Type Designator: JMH65R190APLN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 17.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: DFN8080-4L

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JMH65R190APLN datasheet

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JMH65R190APLN

JMH65R190APLN 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 17.4 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 169 m Eoss@400V 5.2 J Pb-free Lead Plating H... See More ⇒

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 jmh65r190aplnfd.pdf pdf_icon

JMH65R190APLN

JMH65R190APLNFD 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 17.4 A Fast Recovery Body Diode RDS(ON)_Typ (@ VGS = 10V) 169 m Eoss@400V 5.2 J 100% UIS Tested, 100% Rg Tested ... See More ⇒

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 jmh65r190ae.pdf pdf_icon

JMH65R190APLN

JMH65R190AE 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 20 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 170 m Eoss@400V 5.2 J Pb-free Lead Plating Halog... See More ⇒

 4.2. Size:347K  jiejie micro
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JMH65R190APLN

JMH65R190AF 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 20 A RDS(ON)_Typ (@ VGS = 10V) 170 100% UIS Tested, 100% Rg Tested m Eoss@400V 5.2 J Pb-free Lead Plating Hal... See More ⇒

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Detailed specifications: JMSH1509PE, JMSH1509PG, JMH65R190AC, JMH65R190ACFDQ, JMH65R190ACFP, JMH65R190AE, JMH65R190AF, JMH65R190AFFD, IRL3713, JMH65R190APLNFD, JMH65R190AS, JMH65R190AW, JMH65R190PCFD, JMH65R190PEFD, JMH65R190PFFD, JMH65R190PSFD, JMSH1204PC

Keywords - JMH65R190APLN MOSFET specs

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