JMSH1003NG Specs and Replacement
Type Designator: JMSH1003NG
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 178
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 159
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 877
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037
Ohm
Package:
PDFN5X6-8L
-
MOSFET ⓘ Cross-Reference Search
JMSH1003NG datasheet
..1. Size:367K jiejie micro
jmsh1003ng.pdf 
JMSH1003NG 100V 3.1m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 159 A RDS(ON)_Typ (@ VGS = 10V) 3.1 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Management in Telecom., Industrial ... See More ⇒
5.1. Size:1188K jiejie micro
jmsh1003ne7.pdf 
100V, 167A, 3.1m N-channel Power SGT MOSFET JMSH1003NE7 Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 167 A RDS(ON)_Typ(@VGS=10V 3.1 mW Applications Load Switch PWM Application Power Management TO-263-7L ... See More ⇒
5.2. Size:746K jiejie micro
jmsh1003nc jmsh1003ne.pdf 
JMSH1003NC JMSH1003NE 100V 3.0mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 213 A RDS(ON) (@ VGS = 10V) 3.0 Halogen-free and RoHS-compliant mW Applications Motor Driving in Power Tool, E-vehicle, Robotics Current Switc... See More ⇒
6.1. Size:1257K jiejie micro
jmsh1003ttl.pdf 
100V, 184A, 3.5m N-channel Power SGT MOSFET JMSH1003TTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 184 A RDS(ON)_Typ(@VGS=10V 3.5 mW Applications Load Switch PWM Application Power Management PowerJE 10... See More ⇒
6.2. Size:1222K jiejie micro
jmsh1003tf.pdf 
100V, 80A, 4.4m N-channel Power SGT MOSFET JMSH1003TF Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 80 A RDS(ON)_Typ(@VGS=10V 4.4 mW Applications Load Switch PWM Application Power Management D G S TO-22... See More ⇒
6.3. Size:381K jiejie micro
jmsh1003atlq.pdf 
JMSH1003ATLQ 100V 2.7m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 228 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.7 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Ap... See More ⇒
6.4. Size:327K jiejie micro
jmsh1003agq.pdf 
JMSH1003AGQ 100V 2.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 170 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 2.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications... See More ⇒
6.5. Size:313K jiejie micro
jmsh1003ae7q.pdf 
JMSH1003AE7Q 100V 2.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 196 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 2.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application... See More ⇒
6.6. Size:380K jiejie micro
jmsh1003atl.pdf 
JMSH1003ATL 100V 2.7m TOLL N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 228 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.7 m Halogen-free and RoHS-compliant Applications Power Management in Compu... See More ⇒
6.7. Size:354K jiejie micro
jmsh1003agwq.pdf 
JMSH1003AGWQ 100V 2.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th) 2.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 178 A Wettable Flanks design support high manufacturability and RDS(ON) (@ VGS = 10V) 2.8 m Automated Optical Inspection (AOI) Pb-free Lead Plat... See More ⇒
6.8. Size:635K jiejie micro
jmsh1003tc jmsh1003te.pdf 
JMSH1003TC JMSH1003TE 100V 3.0mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 223 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3 Pb-free L... See More ⇒
6.9. Size:326K jiejie micro
jmsh1003ag.pdf 
JMSH1003AG 100V 2.8m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 144 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.8 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial A... See More ⇒
Detailed specifications: JMSH1003AG
, JMSH1003AGQ
, JMSH1003AGWQ
, JMSH1003ATL
, JMSH1003ATLQ
, JMSH1003NC
, JMSH1003NE
, JMSH1003NE7
, P55NF06
, JMSH1003TC
, JMSH1003TE
, JMSH1003TF
, JMSH1003TTL
, JMH65R290ACFP
, JMH65R290AE
, JMH65R290AEFDQ
, JMH65R290AF
.
Keywords - JMSH1003NG MOSFET specs
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JMSH1003NG pdf lookup
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.