JMSH1003NG Datasheet and Replacement. Cross Reference Search

..1. Size:367K jiejie micro
jmsh1003ng.pdf pdf_icon

JMSH1003NG100V 3.1m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 159 A RDS(ON)_Typ (@ VGS = 10V)3.1 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Management in Telecom., Industrial

5.1. Size:1188K jiejie micro
jmsh1003ne7.pdf pdf_icon

100V, 167A, 3.1m N-channel Power SGT MOSFETJMSH1003NE7Product SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 167 ARDS(ON)_Typ(@VGS=10V 3.1 mWApplications Load Switch PWM Application Power ManagementTO-263-7L

5.2. Size:746K jiejie micro
jmsh1003nc jmsh1003ne.pdf pdf_icon

JMSH1003NCJMSH1003NE100V 3.0mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 213 A RDS(ON) (@ VGS = 10V)3.0 Halogen-free and RoHS-compliant mWApplications Motor Driving in Power Tool, E-vehicle, Robotics Current Switc

6.1. Size:1257K jiejie micro
jmsh1003ttl.pdf pdf_icon

100V, 184A, 3.5m N-channel Power SGT MOSFETJMSH1003TTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 184 ARDS(ON)_Typ(@VGS=10V 3.5 mWApplications Load Switch PWM Application Power ManagementPowerJE10

6.2. Size:1222K jiejie micro
jmsh1003tf.pdf pdf_icon

100V, 80A, 4.4m N-channel Power SGT MOSFETJMSH1003TFProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 80 ARDS(ON)_Typ(@VGS=10V 4.4 mWApplications Load Switch PWM Application Power ManagementDG STO-22

6.3. Size:381K jiejie micro
jmsh1003atlq.pdf pdf_icon

JMSH1003ATLQ100V 2.7m TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 228 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.7 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Ap

6.4. Size:327K jiejie micro
jmsh1003agq.pdf pdf_icon

JMSH1003AGQ100V 2.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 170 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 2.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

6.5. Size:313K jiejie micro
jmsh1003ae7q.pdf pdf_icon

JMSH1003AE7Q100V 2.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 196 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 2.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application

6.6. Size:380K jiejie micro
jmsh1003atl.pdf pdf_icon

JMSH1003ATL100V 2.7m TOLL N-Ch Power MOSFETProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 228 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.7 m Halogen-free and RoHS-compliantApplications Power Management in Compu

6.7. Size:354K jiejie micro
jmsh1003agwq.pdf pdf_icon

JMSH1003AGWQ100V 2.8m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)2.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 178 A Wettable Flanks design support high manufacturability and RDS(ON) (@ VGS = 10V)2.8 mAutomated Optical Inspection (AOI) Pb-free Lead Plat

6.8. Size:635K jiejie micro
jmsh1003tc jmsh1003te.pdf pdf_icon

JMSH1003TCJMSH1003TE100V 3.0mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS100 V Low Gate Charge Low Gate Charge VGS(th)_Typ3.2 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 223 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)3 Pb-free L

6.9. Size:326K jiejie micro
jmsh1003ag.pdf pdf_icon

JMSH1003AG100V 2.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 144 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.8 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial A

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