DMG9926USD Datasheet and Replacement
Type Designator: DMG9926USD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
|Id| ⓘ - Maximum Drain Current: 8 A
Qg ⓘ - Total Gate Charge: 8.8 nC
Cossⓘ - Output Capacitance: 867 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SO8
DMG9926USD Datasheet (PDF)
dmg9926usd.pdf

DMG9926USDDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 24m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D 29m @ VGS = 2.5V Terminals Conn
dmg9926udm.pdf

DMG9926UDMDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low Gate Charge Case: SOT-26 Low RDS(ON): Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 28m @VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D 32m @
dmg9933usd.pdf

DMG9933USDDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See Di
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