All MOSFET. JMPC630BJ Datasheet

 

JMPC630BJ Datasheet and Replacement


   Type Designator: JMPC630BJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.296 Ohm
   Package: TO220
 

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JMPC630BJ Datasheet (PDF)

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JMPC630BJ

200V, 9A, 228m N-channel Power Planar MOSFETJMPC630BJProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 200 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 9 ARDS(ON)_Typ(@VGS=10V 228 mWApplications Load Switch PWM Application Power ManagementDG STO-2

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