JMPC8N60BJ Datasheet. Specs and Replacement

Type Designator: JMPC8N60BJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.29 Ohm

Package: TO220

JMPC8N60BJ substitution

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JMPC8N60BJ datasheet

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JMPC8N60BJ

JMPC8N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 8A Load Switch RDS(ON) ... See More ⇒

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JMPC8N60BJ

JMPC840BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 500V, 9A Load Switch RDS(ON) ... See More ⇒

Detailed specifications: JMPC34N20BJ, JMPC4N60BJ, JMPC4N65BJ, JMPC52N20BJ, JMPC5N50BJ, JMPC630BJ, JMPC7N65BJ, JMPC840BJ, SI2302, JMSH1004AC, JMSH1004AE, JMSH1004AEQ, JMSH1004BC, JMSH1004BE, JMSH1004BEQ, JMSH1004BG, JMSH1004BGQ

Keywords - JMPC8N60BJ MOSFET specs

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