All MOSFET. JMPC8N60BJ Datasheet

 

JMPC8N60BJ Datasheet and Replacement


   Type Designator: JMPC8N60BJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.29 Ohm
   Package: TO220
 

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JMPC8N60BJ Datasheet (PDF)

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JMPC8N60BJ

JMPC8N60BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 600V, 8A Load SwitchRDS(ON)

 9.1. Size:1045K  jiejie micro
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JMPC8N60BJ

JMPC840BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 500V, 9A Load SwitchRDS(ON)

Datasheet: JMPC34N20BJ , JMPC4N60BJ , JMPC4N65BJ , JMPC52N20BJ , JMPC5N50BJ , JMPC630BJ , JMPC7N65BJ , JMPC840BJ , IRFZ46N , JMSH1004AC , JMSH1004AE , JMSH1004AEQ , JMSH1004BC , JMSH1004BE , JMSH1004BEQ , JMSH1004BG , JMSH1004BGQ .

Keywords - JMPC8N60BJ MOSFET datasheet

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