JMPC8N60BJ Datasheet and Replacement
Type Designator: JMPC8N60BJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.29 Ohm
Package: TO220
JMPC8N60BJ substitution
JMPC8N60BJ Datasheet (PDF)
jmpc8n60bj.pdf
JMPC8N60BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 600V, 8A Load SwitchRDS(ON)
jmpc840bj.pdf
JMPC840BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 500V, 9A Load SwitchRDS(ON)
Datasheet: JMPC34N20BJ , JMPC4N60BJ , JMPC4N65BJ , JMPC52N20BJ , JMPC5N50BJ , JMPC630BJ , JMPC7N65BJ , JMPC840BJ , SI2302 , JMSH1004AC , JMSH1004AE , JMSH1004AEQ , JMSH1004BC , JMSH1004BE , JMSH1004BEQ , JMSH1004BG , JMSH1004BGQ .
History: 4N65G-TMS4-T | 4N65G-TND-R | 4N65G-TMS-T
Keywords - JMPC8N60BJ MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 4N65G-TMS4-T | 4N65G-TND-R | 4N65G-TMS-T
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