JMSH1004BG Datasheet and Replacement

JMSH1004BG100V 3.3mW N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ (@ VGS = 10V)3.3 mW Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Auto

JMSH1004BGQ100V 3.3m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 138 A RDS(ON)_Typ (@ VGS = 10V)3.3 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application

JMSH1004BGWQ100V 3.6m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)2.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 152 A Wettable Flanks design support high manufacturability and RDS(ON) (@ VGS = 10V)3.6 mAutomated Optical Inspection (AOI) Pb-free Lead Plat

JMSH1004BEQ100V 3.5m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 160 A RDS(ON)_Typ (@ VGS = 10V)3.5 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicati

JMSH1004BCJMSH1004BE100V 3.7mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 134 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.7 mW Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE