JMSH0402PG Datasheet. Specs and Replacement

Type Designator: JMSH0402PG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 202 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 2042 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: PDFN5X6-8L

JMSH0402PG substitution

- MOSFET ⓘ Cross-Reference Search

 

JMSH0402PG datasheet

 ..1. Size:1190K  jiejie micro
jmsh0402pg.pdf pdf_icon

JMSH0402PG

40V, 202A, 1.4m N-channel Power SGT MOSFET JMSH0402PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 202 A RDS(ON)_Typ(@VGS=10V 1.4 mW Applications Load Switch PWM Application Power Management D G S PDFN... See More ⇒

 6.1. Size:332K  jiejie micro
jmsh0402bgq.pdf pdf_icon

JMSH0402PG

JMSH0402BGQ 40V 2.0m N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Typ. Unit VDS 40 V Low Gate Charge, Qg VGS(th) 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 166 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 2.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN5x6-... See More ⇒

 6.2. Size:353K  jiejie micro
jmsh0402akq.pdf pdf_icon

JMSH0402PG

JMSH0402AKQ 40V 2.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 170 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications ... See More ⇒

 6.3. Size:335K  jiejie micro
jmsh0402aeq.pdf pdf_icon

JMSH0402PG

JMSH0402AEQ 40V 1.3m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th) 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 253 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 1.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-263-3L... See More ⇒

Detailed specifications: JMSH1004NC, JMSH1004NE, JMSH1004NG, JMSH1004RG, JMSH0402AEQ, JMSH0402AGQ, JMSH0402AKQ, JMSH0402BGQ, IRF830, JMSH0403AG, JMSH0403AGHWQ, JMSH0403AGQ, JMSH0403BG, JMSH0403BGQ, JMSH0403PG, JMSH0403PGHW, JMSH0403PGHWQ

Keywords - JMSH0402PG MOSFET specs

 JMSH0402PG cross reference

 JMSH0402PG equivalent finder

 JMSH0402PG pdf lookup

 JMSH0402PG substitution

 JMSH0402PG replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs