All MOSFET. JMSH0403BGQ Datasheet

 

JMSH0403BGQ Datasheet and Replacement


   Type Designator: JMSH0403BGQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 145 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14.8 nS
   Cossⓘ - Output Capacitance: 1150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: PDFN5X6-8L
 

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JMSH0403BGQ Datasheet (PDF)

 ..1. Size:368K  jiejie micro
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JMSH0403BGQ

 4.1. Size:344K  jiejie micro
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JMSH0403BGQ

JMSH0403BG40V 2.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 139 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.2 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE,

 6.1. Size:1225K  jiejie micro
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JMSH0403BGQ

40V, 131A, 3.0m N-channel Power SGT MOSFETJMSH0403PGHWProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 131 ARDS(ON)_Typ(@VGS=10V 3.0 mWApplications Load Switch PWM Application Power ManagementPDFN5X6-8L-H

 6.2. Size:1191K  jiejie micro
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JMSH0403BGQ

40V, 143A, 2.5m N-channel Power SGT MOSFETJMSH0403PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 3.1 V 100% Vds TestedID(@VGS=10V) 143 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 2.5 mW AEC-Q101 QualifiedApplications Load Switch PWM Applicat

Datasheet: JMSH0402AGQ , JMSH0402AKQ , JMSH0402BGQ , JMSH0402PG , JMSH0403AG , JMSH0403AGHWQ , JMSH0403AGQ , JMSH0403BG , IRF9640 , JMSH0403PG , JMSH0403PGHW , JMSH0403PGHWQ , JMSH0403PGQ , JMSH0403PU , , , .

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