JMSH0403BGQ Datasheet. Specs and Replacement
Type Designator: JMSH0403BGQ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 145 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14.8 nS
Cossⓘ - Output Capacitance: 1150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: PDFN5X6-8L
JMSH0403BGQ substitution
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JMSH0403BGQ datasheet
jmsh0403bg.pdf
JMSH0403BG 40V 2.2m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 139 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.2 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, ... See More ⇒
jmsh0403pghw.pdf
40V, 131A, 3.0m N-channel Power SGT MOSFET JMSH0403PGHW Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 131 A RDS(ON)_Typ(@VGS=10V 3.0 mW Applications Load Switch PWM Application Power Management PDFN5X6-8L-H... See More ⇒
jmsh0403pgq.pdf
40V, 143A, 2.5m N-channel Power SGT MOSFET JMSH0403PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 3.1 V 100% Vds Tested ID(@VGS=10V) 143 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 2.5 mW AEC-Q101 Qualified Applications Load Switch PWM Applicat... See More ⇒
Detailed specifications: JMSH0402AGQ, JMSH0402AKQ, JMSH0402BGQ, JMSH0402PG, JMSH0403AG, JMSH0403AGHWQ, JMSH0403AGQ, JMSH0403BG, K2611, JMSH0403PG, JMSH0403PGHW, JMSH0403PGHWQ, JMSH0403PGQ, JMSH0403PU, JMSH1002AC, JMSH1002AE, JMSH1002AEQ
Keywords - JMSH0403BGQ MOSFET specs
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