All MOSFET. 2SK3214 Equivalents Search

2SK3214 Silicon N Channel MOS FET High Speed Power Switching ADE-208-763(Z) Target Specification 1st. Edition December 1998 Features Low on-resistance RDS =130m typ. High speed switching 4V gate drive device can be driven from 5V source Outline TO 220AB D G 1. Gate 1 2. Drain(Flange) 2 3. Source 3 S 2SK3214 Absolute Maximum Ratings (Ta = 25 C) Item S... See More ⇒

isc N-Channel MOSFET Transistor 2SK3214 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 170m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

FUJI POWER MOS-FET 2SK3218-01 N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) 3. Source DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25 C unles... See More ⇒

FUJI POWER MOS-FET 2SK3217-01MR N-CHANNEL SILICON POWER MOS-FET TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications 2.54 Switching regulators UPS (Uninterruptible Power Supply) 3. Source DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25... See More ⇒

2SK3215 Silicon N Channel MOS FET High Speed Power Switching ADE-208-764(Z) Target Specification 1st. Edition Dec. 1998 Features Low on-resistance RDS = 350m typ. High speed switching 4V gate drive device can be driven from 5V source Outline TO 220AB D G 1. Gate 1 2. Drain(Flange 2 3. Source 3 S 2SK3215 Absolute Maximum Ratings (Ta = 25 C) Item Symbol ... See More ⇒

FUJI POWER MOS-FET 2SK3216-01 N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) 3. Source DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25 C unles... See More ⇒

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS = 60 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK(S)-... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

2SK3210(L), 2SK3210(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G0414-0300 (Previous ADE-208-760A (Z)) Rev.3.00 Sep. 30, 2004 Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK D 4 4 1. Gate 2. Drain G 3. Source 4. Drain 1 2 3 1 2 3 S Absolute Maximum Rating... See More ⇒

2SK3212 Silicon N Channel MOS FET High Speed Power Switching REJ03G1092-0300 (Previous ADE-208-752A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =0.1 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3 ... See More ⇒

Preliminary Datasheet 2SK3210(L), 2SK3210(S) R07DS0409EJ0400 (Previous REJ03G0414-0300) Silicon N Channel MOS FET Rev.4.00 High Speed Power Switching May 16, 2011 Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B ... See More ⇒

... See More ⇒

FUJI POWER MOS-FET 2SK3219-01MR N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25... See More ⇒

isc N-Channel MOSFET Transistor 2SK3216 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

isc N-Channel MOSFET Transistor 2SK3210S FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 45m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

isc N-Channel MOSFET Transistor 2SK3210L FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 45m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

isc N-Channel MOSFET Transistor 2SK3212 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

isc N-Channel MOSFET Transistor 2SK3211S FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

isc N-Channel MOSFET Transistor 2SK3215 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

isc N-Channel MOSFET Transistor 2SK3218 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 43m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

isc N-Channel MOSFET Transistor 2SK3211L FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

isc N-Channel MOSFET Transistor 2SK3219 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 43m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

isc N-Channel MOSFET Transistor 2SK3217 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒